Abstract: An electronic device is disclosed, which includes: a support unit; a display panel disposed on the support unit; a first circuit board, wherein the support unit is disposed between the display panel and the first circuit board; an electronic component disposed on the first circuit board; and a second circuit board electrically connected to the display panel, wherein the first circuit board is electrically connected to the display panel through the second circuit board, wherein the first circuit board includes a protruding section, and the electronic component is disposed on the protruding section.

Abstract: An antifuse-type one time programming memory includes a first memory cell. The first memory cell includes an antifuse transistor. The antifuse transistor includes a first nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. The first nanowire is surrounded by the first gate structure. The first gate structure includes a first spacer, a second spacer, a first gate dielectric layer and a first gate layer. The first drain/source structure is electrically contacted with the first terminal of the first nanowire. The second drain/source structure is electrically contacted with the second terminal of the first nanowire.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor body and a transistor. The transistor includes a drain region in the semiconductor body, a first doped region in the drain region, a source region in the semiconductor body, a second doped region adjacent the source region, and a third doped region between the first doped region and the second doped region. The third doped region includes a first portion having a first concentration of dopants, a second portion adjacent the first portion and having a second concentration of dopants, a third portion adjacent the second portion and having a third concentration of dopants, and a fourth portion adjacent the third portion and having a fourth concentration of dopants. The first concentration is less than the second concentration. The second concentration is greater than the third concentration. The third concentration is less than the fourth concentration.

Abstract: A thermally conductive board includes a top metal layer, a bottom metal layer, and an electrically insulating but thermally conductive layer (for simplification hereinafter referred to as “thermally conductive layer”) laminated between the top metal layer and the bottom metal layer. The thermally conductive layer satisfies a relation of I˜qa. There is an equivalence relation between I and q; “I” stands for scattering intensity; “q” stands for scattering vector, and “a” stands for the power of q. q ranges from 0.007 ??1 to 0.1 ??1, and a ranges from ?3 to ?4.

Abstract: The present invention relates to an encapsulation structure for light-emitting diode, primarily assembled from an encapsulation base, light-emitting diode chips and transparent encapsulation material, in which the light-emitting diode chips are mounted on an encapsulation region of the encapsulation base, after which the transparent encapsulation material is used to overlay the predetermined positions of the light-emitting diode chips. Accordingly, the light rays produced by the light-emitting diode chips can be emitted from the side areas, and when the light-emitting diode chips are mounted and joined to the encapsulation bases, then brightness at the connected areas can be maintained, and uneven brightness is prevented from occurring.

Abstract: An overdrive apparatus for advancing the response time of a liquid crystal display (LCD) is disclosed, comprising a overdrive table, a memory storage, and a determining device, wherein the overdrive table is used for saving a plurality of overdrive-voltage values, the memory storage is used for saving a first frame, the determining device receives a first pixel, which is corresponding with a second pixel of the first frame, wherein the determining device can select an overdrive-voltage value from the overdrive table according to the first pixel and the second pixel, wherein the memory storage is provided within a first chipset, which comprises a first active face and a plurality of first bond pads provided on the first active face; the determining device is provided within a second chipset, which comprises a second active face and a plurality of second bond pads provided on the second active face, wherein the first chipset and the second chipset are stacked with each other, and the second bond pads are electr