Patents by Inventor Hsin-mei Lin

Hsin-mei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200247101
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.
    Type: Application
    Filed: November 6, 2019
    Publication date: August 6, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Hsin-Hsin SHEN, Yu-Chi WANG, Ming-Chia YANG, Yu-Bing LIOU, Wei-Hong CHANG, Yun-Han LIN, Hsin-Yi HSU, Yun-Chung TENG, Chia-Jung LU, Yi-Hsuan LEE, Jian-Wei LIN, Kun-Mao KUO, Ching-Mei CHEN
  • Publication number: 20200126787
    Abstract: A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Patent number: 10522349
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Publication number: 20190164745
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 30, 2019
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang