Patents by Inventor Hsin-mei Lin

Hsin-mei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Anti-reflective coating by ion implantation for lithography patterning
    Patent number: 11158505
    Abstract: A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Anti-Reflective Coating by Ion Implantation for Lithography Patterning
    Publication number: 20200126787
    Abstract: A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Anti-reflective coating by ion implantation for lithography patterning
    Patent number: 10522349
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Anti-Reflective Coating by Ion Implantation for Lithography Patterning
    Publication number: 20190164745
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 30, 2019
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang