Abstract: The present disclosure provides a near-infrared absorbing filter, including an absorbing type infrared filtering medium having opposite first and second surfaces; an organic coating layer formed on the first surface of the absorbing type filtering medium for absorbing infrared rays; a first multi-layered film structure formed on the organic coating layer with the organic coating layer disposed between the first multi-layered film structure and the absorbing type infrared filtering medium; and a second multi-layered film structure formed on the second surface of the absorbing type infrared filtering medium. The near-infrared filter of the present disclosure is able to reduce the wavelength difference of T50 and T20 of the incident light within the range of from 0 to 30 degrees to less than 5 nm, thereby reducing chromatic aberration effectively and reducing ghost images of infrared reflections. The disclosure further provides an image sensor including the near-infrared absorbing filter.

Abstract: A film type IRAF filter and the manufacturing method thereof are disclosed. A method for manufacturing a film type IRAF filter includes steps of: providing a first carrier trimmed to a predetermined size in advance; forming a first substrate on the first carrier; forming an intermedia layer on a first surface of the first substrate; forming an Infrared-absorbing filter dye layer on the intermedia layer; forming a first multi-layers optical film on the Infrared-absorbing filter dye layer; forming a release layer on the first multi-layers optical film; removing the first carrier to expose a second surface opposite the first surface of the first substrate; forming a second multi-layers optical films on the second surface of the first substrate; and removing the release layer.

Abstract: The present disclosure provides a near-infrared absorbing filter, including an absorbing type infrared filtering medium having opposite first and second surfaces; an organic coating layer formed on the first surface of the absorbing type filtering medium for absorbing infrared rays; a first multi-layered film structure formed on the organic coating layer with the organic coating layer disposed between the first multi-layered film structure and the absorbing type infrared filtering medium; and a second multi-layered film structure formed on the second surface of the absorbing type infrared filtering medium. The near-infrared filter of the present disclosure is able to reduce the wavelength difference of T50 and T20 of the incident light within the range of from 0 to 30 degrees to less than 5 nm, thereby reducing chromatic aberration effectively and reducing ghost images of infrared reflections. The disclosure further provides an image sensor including the near-infrared absorbing filter.