Patents by Inventor Hsin-Ming Cheng

Hsin-Ming Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type metal oxide semiconductor material and transistor
    Patent number: 9401433
    Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: July 26, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shan-Haw Chiou, Tzu-Chi Chou, Wen-Hsuan Chao, Hsin-Ming Cheng, Mu-Tung Chang, Tien-Heng Huang, Ren-Fong Cai