Patents by Inventor Hsin Ping Wu
Hsin Ping Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968556Abstract: A network quality measurement method and system are provided. In the method, a movement path and a movement speed of a vehicle device are determined according to a size of a space and an endurance time of the vehicle device, and the vehicle device is controlled to move on the movement path at the movement speed. During a movement of the vehicle device, a network quality in the space is measured according to a measurement frequency to generate network quality data. Whether the network quality in the space is changed is determined according to the network quality data. Whether there is an obstacle around the vehicle device is detected. When it is determined that the network quality in the space is changed or the obstacle is detected around the vehicle device, at least one of the movement path, the movement speed, and the measurement frequency is adjusted.Type: GrantFiled: December 26, 2021Date of Patent: April 23, 2024Assignee: Industrial Technology Research InstituteInventors: Hui-Ping Kuo, Sheng-Chieh Huang, Hsin-Hui Hwang, Yi-Ming Wu, Man Ju Chien
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Patent number: 11923306Abstract: A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling a conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.Type: GrantFiled: August 30, 2021Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wei Su, Chia-Tien Wu, Hsin-Ping Chen, Shau-Lin Shue
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Patent number: 8779539Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.Type: GrantFiled: September 21, 2011Date of Patent: July 15, 2014Assignee: United Microelectronics CorporationInventors: Ching-Hung Kao, Hsin-Ping Wu
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Patent number: 8673669Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.Type: GrantFiled: July 2, 2012Date of Patent: March 18, 2014Assignee: United Microelectronics Corp.Inventor: Hsin-Ping Wu
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Patent number: 8493661Abstract: The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: GrantFiled: April 27, 2012Date of Patent: July 23, 2013Assignee: United Microelectronics Corp.Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Publication number: 20130069190Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.Type: ApplicationFiled: September 21, 2011Publication date: March 21, 2013Applicant: UNITED MICROELECTRONICS CORPORATIONInventors: Ching-Hung KAO, Hsin-Ping Wu
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Patent number: 8379312Abstract: A method of fabricating a contiguous microlens array is disclosed. First, an array of photoresist patterns is formed, wherein each photoresist pattern has a substantially circular or polygonal shape in a top view and neighboring photoresist patterns are connected with each other or close to each other. Then a reflow step is performed to heat the photoresist patterns thereby rounding a surface of each photoresist pattern and connecting the neighboring photoresist patterns that are close to each other. Finally, a fixing step is performed to fix a shape of each photoresist pattern. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: GrantFiled: April 27, 2012Date of Patent: February 19, 2013Assignee: United Microelectronics Corp.Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Patent number: 8318579Abstract: A method for fabricating a semiconductor device includes steps as following. First, a substrate with an edge-mark is provided. The substrate has a front-side surface and a back-side surface opposite to each other. The front-side surface has an active region and a peripheral region with an alignment mark formed thereon. Next, an optical shielding layer is formed over the back-side surface of the substrate. Next, a first photo mask is aligned to the substrate by standing on the edge-mark. Next, a portion of the optical shielding layer corresponding with the alignment mark is removed by using the first photo mask. Next, a second photo mask is aligned to the substrate by standing on the alignment mark. Then, a portion of the optical shielding layer corresponding with the active region is removed to expose a portion of the substrate by using the second photo mask for forming an optical shielding pattern.Type: GrantFiled: December 1, 2011Date of Patent: November 27, 2012Assignee: United Microelectronics Corp.Inventor: Hsin-Ping Wu
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Publication number: 20120276679Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.Type: ApplicationFiled: July 2, 2012Publication date: November 1, 2012Inventor: Hsin-Ping Wu
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Publication number: 20120211641Abstract: The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: ApplicationFiled: April 27, 2012Publication date: August 23, 2012Applicant: United Microelectronics Corp.Inventors: Yu-Tsung LIN, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Publication number: 20120205827Abstract: A method of fabricating a contiguous microlens array is disclosed. First, an array of photoresist patterns is formed, wherein each photoresist pattern has a substantially circular or polygonal shape in a top view and neighboring photoresist patterns are connected with each other or close to each other. Then a reflow step is performed to heat the photoresist patterns thereby rounding a surface of each photoresist pattern and connecting the neighboring photoresist patterns that are close to each other. Finally, a fixing step is performed to fix a shape of each photoresist pattern. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: ApplicationFiled: April 27, 2012Publication date: August 16, 2012Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Patent number: 8237206Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.Type: GrantFiled: August 12, 2008Date of Patent: August 7, 2012Assignee: United Microelectronics Corp.Inventor: Hsin-Ping Wu
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Patent number: 8228606Abstract: A contiguous microlens array including a plurality of contiguous microlenses is described. Each microlens has substantially circular contours at the heights higher than the connection sections of the microlens with neighboring microlenses, and has substantially partially circular contours at the heights on the connection sections adjacent to the neighboring microlenses. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: GrantFiled: January 8, 2008Date of Patent: July 24, 2012Assignee: United Microelectronics Corp.Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Patent number: 7816168Abstract: A method for forming a color filter is provided. A substrate having a passivation layer thereon is provided. The passivation layer has at least one trench therein within a peripheral region of the substrate. A first color filter layer is formed over the passivation layer to fill the trench by performing a first spin-on coating process with a first spin rate. Thereafter, the first color filter layer is patterned so as to form a plurality of first color filter blocks in a display region of the substrate and expose a portion of the passivation layer. A second color filter layer is formed over the passivation layer by performing a second spin-on coating process with a second spin rate, which is larger than the first spin rate. Next, the second color filter layer is patterned to form a plurality of second color filter blocks between the first color filter blocks respectively.Type: GrantFiled: June 13, 2008Date of Patent: October 19, 2010Assignee: United Microelectronics Corp.Inventor: Hsin-Ping Wu
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Patent number: 7736939Abstract: A method for forming microlenses of different curvatures is described, wherein a substrate having at least a first and a second areas different in height is provided. A transparent photosensitive layer having a planar surface is formed on the substrate and then patterned into at least two islands of different thicknesses respectively over the first area and the second area. The at least two islands are heated and softened to form at least two microlenses of different curvatures respectively over the first area and the second area, wherein the higher an area is, the smaller the curvature of the corresponding microlens is.Type: GrantFiled: July 7, 2005Date of Patent: June 15, 2010Assignee: United Microelectronics Corp.Inventors: Hsin-Ping Wu, Chia-Huei Lin
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Publication number: 20100038688Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.Type: ApplicationFiled: August 12, 2008Publication date: February 18, 2010Inventor: Hsin-Ping Wu
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Publication number: 20090174945Abstract: A contiguous microlens array including a plurality of contiguous microlenses is described. Each microlens has substantially circular contours at the heights higher than the connection sections of the microlens with neighboring microlenses, and has substantially partially circular contours at the heights on the connection sections adjacent to the neighboring microlenses. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.Type: ApplicationFiled: January 8, 2008Publication date: July 9, 2009Applicant: United Microelectronics Corp.Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
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Patent number: 7524592Abstract: An optical proximity correction mask used for fabricating a color filter includes a substrate, a mask pattern and a mending pattern. Wherein, the mask pattern is disposed on the substrate. The mask pattern and the transferred pattern, being transferred to the color filter, are not matched and cause occurrence of a light leaking region in the color filter. The mending pattern is disposed over the substrate around the periphery of the mask pattern and corresponds to the light leaking region.Type: GrantFiled: September 9, 2005Date of Patent: April 28, 2009Assignee: United Microelectronics Corp.Inventors: Hsin-Ping Wu, Chia-Huei Lin
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Publication number: 20080248410Abstract: A method for forming a color filter is provided. A substrate having a passivasion layer thereon is provided. The passivasion layer has at least one trench therein within a peripheral region of the substrate. A first color filter layer is formed over the passivasion layer to fill the trench by performing a first spin-on coating process with a first spin rate. Thereafter, the first color filter layer is patterned so as to form a plurality of first color filter blocks in a display region of the substrate and expose a portion of the passivasion layer. A second color filter layer is formed over the passivasion layer by performing a second spin-on coating process with a second spin rate, which is larger than the first spin rate. Next, the second color filter layer is patterned to form a plurality of second color filter blocks between the first color filter blocks respectively.Type: ApplicationFiled: June 13, 2008Publication date: October 9, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventor: Hsin-Ping Wu
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Patent number: 7410822Abstract: A method for forming a color filter is provided. The method comprises steps of providing a substrate having a passivasion layer formed thereon. The substrate has at least one complementary metal-oxide semiconductor formed therein and the passivasion layer has at least trench formed therein in a peripheral region of the substrate. At least two adjacent color filter blocks are sequentially formed over the passivasion layer and the color filter blocks comprises a first color filter block and a second color filter block. The first color filter block and the second color filter block are disposed within a display region of the substrate. Moreover, the material for forming the first color filter, which is formed prior to the formation of the second color filter block, further fills the trench in the peripheral region simultaneously with a formation of the first color filter block.Type: GrantFiled: July 20, 2006Date of Patent: August 12, 2008Assignee: United Microelectronics Corp.Inventor: Hsin-Ping Wu