Patents by Inventor Hsin Ping Wu

Hsin Ping Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12231201
    Abstract: A reconfiguration intelligent surface device and a beamforming method thereof, the beamforming method adapted to the reconfiguration intelligent surface device is described below. A timing synchronization signal is received. A frame boundary synchronized with a radio signal transmission/reflection device is established according to the timing synchronization signal. Beam control information is received. A reflected beam is formed by reflecting a radio signal beam transmitted or reflected by the radio signal transmission/reflection device according to the beam control information based on the frame boundary synchronized with the radio signal transmission/reflection device.
    Type: Grant
    Filed: December 23, 2022
    Date of Patent: February 18, 2025
    Assignee: Industrial Technology Research Institute
    Inventors: Chiu-Ping Wu, Shih-Hao Fang, Hsin-An Hou, Jen-Yuan Hsu
  • Patent number: 12230534
    Abstract: A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.
    Type: Grant
    Filed: July 24, 2023
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Tai-I Yang, Wei-Chen Chu, Yung-Chih Wang, Chia-Tien Wu, Hsin-Ping Chen, Shau-Lin Shue
  • Publication number: 20250056857
    Abstract: An integrated circuit device includes a Janus transition metal dichalcogenide layer, a first gate structure, and a second gate structure. The Janus transition metal dichalcogenide layer has opposite first and second sides. The first gate structure is on the first side of the Janus transition metal dichalcogenide layer. A second gate structure is on the second side of the Janus transition metal dichalcogenide layer.
    Type: Application
    Filed: August 11, 2023
    Publication date: February 13, 2025
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Yuh-Renn WU, Yun-Ping CHIU, Hsin-Wen HUANG, Hsiu-Chi PAI
  • Publication number: 20250056901
    Abstract: A cell module is provided. The cell module includes a first substrate; a second substrate disposed opposite to the first substrate; a cell unit disposed between the first substrate and the second substrate; a first thermosetting resin layer disposed between the cell unit and the first substrate; a crosslinked polymer layer disposed between the cell unit and the first thermosetting resin layer; and a second thermosetting resin layer disposed between the cell unit and the second substrate. The crosslinked polymer layer includes a crosslinked polymer, and the crosslinked polymer has a crosslinking degree of from 35.4 to 67.4%.
    Type: Application
    Filed: October 28, 2024
    Publication date: February 13, 2025
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chiou-Chu LAI, Chun-Wei SU, Yi-Chun LIU, Hsin-Hsin HSIEH, Hsin-Chung WU, En-Yu PAN, Chin-Ping HUANG, Zih-Yu FANG
  • Publication number: 20250054811
    Abstract: A method for manufacturing a semiconductor structure includes: forming a patterned first layer which is made of a first electrically conductive material, and which includes first lines, second lines, and a connection portion disposed on a part of one of the first lines, the first lines having a height lower than a height of the second lines; forming a first via which is connected to an upper surface of the connection portion, the first via having a height above the connection portion; and forming a second via which is connected to an upper surface of one of the second lines, the second via having a height that is the same as the height of the first via above the connection portion.
    Type: Application
    Filed: August 7, 2023
    Publication date: February 13, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chen CHU, Chia-Tien WU, Chuan-Pu CHOU, Hsin-Ping CHEN
  • Patent number: 8779539
    Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: July 15, 2014
    Assignee: United Microelectronics Corporation
    Inventors: Ching-Hung Kao, Hsin-Ping Wu
  • Patent number: 8673669
    Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: March 18, 2014
    Assignee: United Microelectronics Corp.
    Inventor: Hsin-Ping Wu
  • Patent number: 8493661
    Abstract: The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: July 23, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
  • Publication number: 20130069190
    Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 21, 2013
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: Ching-Hung KAO, Hsin-Ping Wu
  • Patent number: 8379312
    Abstract: A method of fabricating a contiguous microlens array is disclosed. First, an array of photoresist patterns is formed, wherein each photoresist pattern has a substantially circular or polygonal shape in a top view and neighboring photoresist patterns are connected with each other or close to each other. Then a reflow step is performed to heat the photoresist patterns thereby rounding a surface of each photoresist pattern and connecting the neighboring photoresist patterns that are close to each other. Finally, a fixing step is performed to fix a shape of each photoresist pattern. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: February 19, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
  • Patent number: 8318579
    Abstract: A method for fabricating a semiconductor device includes steps as following. First, a substrate with an edge-mark is provided. The substrate has a front-side surface and a back-side surface opposite to each other. The front-side surface has an active region and a peripheral region with an alignment mark formed thereon. Next, an optical shielding layer is formed over the back-side surface of the substrate. Next, a first photo mask is aligned to the substrate by standing on the edge-mark. Next, a portion of the optical shielding layer corresponding with the alignment mark is removed by using the first photo mask. Next, a second photo mask is aligned to the substrate by standing on the alignment mark. Then, a portion of the optical shielding layer corresponding with the active region is removed to expose a portion of the substrate by using the second photo mask for forming an optical shielding pattern.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: November 27, 2012
    Assignee: United Microelectronics Corp.
    Inventor: Hsin-Ping Wu
  • Publication number: 20120276679
    Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
    Type: Application
    Filed: July 2, 2012
    Publication date: November 1, 2012
    Inventor: Hsin-Ping Wu
  • Publication number: 20120211641
    Abstract: The present disclosure provides a contiguous microlens array, which consists of a plurality of touching microlenses, wherein the adjacent microlenses are connected to each other to form a contiguous microlens array and curvatures of every angle cross section of each microlens are the same. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 23, 2012
    Applicant: United Microelectronics Corp.
    Inventors: Yu-Tsung LIN, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
  • Publication number: 20120205827
    Abstract: A method of fabricating a contiguous microlens array is disclosed. First, an array of photoresist patterns is formed, wherein each photoresist pattern has a substantially circular or polygonal shape in a top view and neighboring photoresist patterns are connected with each other or close to each other. Then a reflow step is performed to heat the photoresist patterns thereby rounding a surface of each photoresist pattern and connecting the neighboring photoresist patterns that are close to each other. Finally, a fixing step is performed to fix a shape of each photoresist pattern. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 16, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
  • Patent number: 8237206
    Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: August 7, 2012
    Assignee: United Microelectronics Corp.
    Inventor: Hsin-Ping Wu
  • Patent number: 8228606
    Abstract: A contiguous microlens array including a plurality of contiguous microlenses is described. Each microlens has substantially circular contours at the heights higher than the connection sections of the microlens with neighboring microlenses, and has substantially partially circular contours at the heights on the connection sections adjacent to the neighboring microlenses. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Grant
    Filed: January 8, 2008
    Date of Patent: July 24, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang
  • Patent number: 7816168
    Abstract: A method for forming a color filter is provided. A substrate having a passivation layer thereon is provided. The passivation layer has at least one trench therein within a peripheral region of the substrate. A first color filter layer is formed over the passivation layer to fill the trench by performing a first spin-on coating process with a first spin rate. Thereafter, the first color filter layer is patterned so as to form a plurality of first color filter blocks in a display region of the substrate and expose a portion of the passivation layer. A second color filter layer is formed over the passivation layer by performing a second spin-on coating process with a second spin rate, which is larger than the first spin rate. Next, the second color filter layer is patterned to form a plurality of second color filter blocks between the first color filter blocks respectively.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: October 19, 2010
    Assignee: United Microelectronics Corp.
    Inventor: Hsin-Ping Wu
  • Patent number: 7736939
    Abstract: A method for forming microlenses of different curvatures is described, wherein a substrate having at least a first and a second areas different in height is provided. A transparent photosensitive layer having a planar surface is formed on the substrate and then patterned into at least two islands of different thicknesses respectively over the first area and the second area. The at least two islands are heated and softened to form at least two microlenses of different curvatures respectively over the first area and the second area, wherein the higher an area is, the smaller the curvature of the corresponding microlens is.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: June 15, 2010
    Assignee: United Microelectronics Corp.
    Inventors: Hsin-Ping Wu, Chia-Huei Lin
  • Publication number: 20100038688
    Abstract: A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
    Type: Application
    Filed: August 12, 2008
    Publication date: February 18, 2010
    Inventor: Hsin-Ping Wu
  • Publication number: 20090174945
    Abstract: A contiguous microlens array including a plurality of contiguous microlenses is described. Each microlens has substantially circular contours at the heights higher than the connection sections of the microlens with neighboring microlenses, and has substantially partially circular contours at the heights on the connection sections adjacent to the neighboring microlenses. The shape of the curved surface of a microlens in the microlens array is selectively adjusted according to its position in the array and the incident angle of light incident thereto.
    Type: Application
    Filed: January 8, 2008
    Publication date: July 9, 2009
    Applicant: United Microelectronics Corp.
    Inventors: Yu-Tsung Lin, Hsin-Ping Wu, Hung-Chao Kao, Ming-I Wang