Abstract: Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: The present invention provides a method for preparing 2,2-bis(4-hydroxycyclohexyl)propane, comprising: hydrogenating a reactive solution containing 2,2-bis(4-hydroxyphenyl)propane under a hydrogen atmosphere in a reactor with catalyst within a temperature range of 80-165° C. and a pressure range of 85-110 kg/cm2 to prepare the 2,2-bis(4-hydroxycyclohexyl)propane. The method of present invention has an advantage of high yield properties and achieves mass production easily, thereby enhancing the value of the industrial application.

Abstract: The present invention provides a method for preparing 2,2-bis(4-hydroxycyclohexyl)propane, comprising: hydrogenating a reactive solution containing 2,2-bis(4-hydroxyphenyl)propane under a hydrogen atmosphere in a reactor with catalyst within a temperature range of 80-165° C. and a pressure range of 85-110 kg/cm2 to prepare the 2,2-bis(4-hydroxycyclohexyl)propane. The method of present invention has an advantage of high yield properties and achieves mass production easily, thereby enhancing the value of the industrial application.

Abstract: Provided is a method for preparing 2-cyclohexyl cyclohexanol, including: hydrogenating a cyclohexanone dimer with hydrogen gas at a temperature ranging from 150 to 250° C. in a reactor containing a catalyst to prepare 2-cyclohexylcyclohexanol, wherein the molar ratio of the hydrogen gas and oil ranges from 1 to 25. The method has advantages of high yield properties and allows for mass production, thereby enhancing the value of the industrial application.