Patents by Inventor Hsin-Wei LIAO

Hsin-Wei LIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230011391
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.
    Type: Application
    Filed: July 8, 2021
    Publication date: January 12, 2023
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
  • Publication number: 20220415804
    Abstract: The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.
    Type: Application
    Filed: June 23, 2021
    Publication date: December 29, 2022
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Yen Huang, Chia-Tien Wu
  • Patent number: 11521896
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower conductive structure arranged over a substrate. An etch stop layer is arranged over the lower conductive structure, and a first interconnect dielectric layer is arranged over the etch stop layer. The integrated chip further includes an interconnect via that extends through the first interconnect dielectric layer and the etch stop layer to directly contact the lower conductive structure. A protective layer surrounds outermost sidewalls of the interconnect via.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20220352113
    Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 3, 2022
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20220352017
    Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 3, 2022
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao
  • Patent number: 11488926
    Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20220344264
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.
    Type: Application
    Filed: April 21, 2021
    Publication date: October 27, 2022
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Yu-Teng Dai, Wei-Hao Liao
  • Patent number: 11482447
    Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: October 25, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Shau-Lin Shue, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20220336263
    Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Shau-Lin Shue, Yu-Teng Dai, Wei-Hao Liao
  • Patent number: 11452775
    Abstract: This invention provides biomarkers (e.g., methylation of R198 or R200 of EGFR or the presence of an arginine at position 497 of EGFR) for the prediction of resistance to cetuximab therapy. This invention also provides methods for the selection of patients for combination therapy with cetuximab and PRMT inhibitors.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: September 27, 2022
    Assignee: Board of Regents, The University of Texas System
    Inventors: Mien-Chie Hung, Hsin-Wei Liao, Jung-Mao Hsu
  • Publication number: 20220302025
    Abstract: Some embodiments relate to a method for forming a semiconductor structure, the method includes forming a first dielectric layer over a substrate. A first conductive wire is formed over the first dielectric layer. A spacer structure is formed over the first conductive wire. The spacer structure is disposed along sidewalls of the first conductive wire. A second dielectric layer is deposited over and around the first conductive wire. The spacer structure is spaced between the first conductive wire and the second dielectric layer. A removal process is performed on the spacer structure and the second dielectric layer. An upper surface of the spacer structure is disposed above an upper surface of the first conductive wire.
    Type: Application
    Filed: June 7, 2022
    Publication date: September 22, 2022
    Inventors: Yu-Teng Dai, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Hsi-Wen Tien, Wei-Hao Liao
  • Patent number: 11373879
    Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
    Type: Grant
    Filed: September 12, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tung-Kai Chen, Ching-Hsiang Tsai, Kao-Feng Liao, Chih-Chieh Chang, Chun-Hao Kung, Fang-I Chih, Hsin-Ying Ho, Chia-Jung Hsu, Hui-Chi Huang, Kei-Wei Chen
  • Publication number: 20200093926
    Abstract: This invention provides biomarkers (e.g., methylation of R198 or R200 of EGFR or the presence of an arginine at position 497 of EGFR) for the prediction of resistance to cetuximab therapy. This invention also provides methods for the selection of patients for combination therapy with cetuximab and PRMT inhibitors.
    Type: Application
    Filed: December 4, 2019
    Publication date: March 26, 2020
    Applicant: Board of Regents, The University of Texas System
    Inventors: Mien-Chie HUNG, Hsin-Wei LIAO, Jung-Mao HSU
  • Patent number: 10537635
    Abstract: This invention provides biomarkers (e.g., methylation of R198 or R200 of EGFR or the presence of an arginine at position 497 of EGFR) for the prediction of resistance to cetuximab therapy. This invention also provides methods for the selection of patients for combination therapy with cetuximab and PRMT inhibitors.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: January 21, 2020
    Assignee: Board of Regents, The University of Texas System
    Inventors: Mien-Chie Hung, Hsin-Wei Liao, Jung-Mao Hsu
  • Publication number: 20160279240
    Abstract: This invention provides biomarkers (e.g., methylation of R198 or R200 of EGFR or the presence of an arginine at position 497 of EGFR) for the prediction of resistance to cetuximab therapy. This invention also provides methods for the selection of patients for combination therapy with cetuximab and PRMT inhibitors.
    Type: Application
    Filed: November 19, 2014
    Publication date: September 29, 2016
    Applicant: Board of Regents, The University of Texas System
    Inventors: Mien-Chie HUNG, Hsin-Wei LIAO, Jung-Mao HSU