Patents by Inventor Hsin-Wen Wang

Hsin-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967717
    Abstract: Disclosed is a tungsten-doped lithium manganese iron phosphate-based particulate for a cathode of a lithium-ion battery. The particulates include a composition represented by a formula of LixMn0.998-y-zFeyMzW0.002PaO4a±p/C, wherein x, y, z, a, p, and M are as defined herein. Also disclosed is a powdery material including the particulates, and a method for preparing the powdery material.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: April 23, 2024
    Assignee: HCM CO., LTD.
    Inventors: Chien-Wen Jen, Hsin-Ta Huang, Chih-Tsung Hsu, Yi-Hsuan Wang
  • Patent number: 11961769
    Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Kuo-Hsiu Hsu, Yu-Kuan Lin, Feng-Ming Chang, Hsin-Wen Su, Lien Jung Hung, Ping-Wei Wang
  • Patent number: 11956948
    Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.
    Type: Grant
    Filed: April 1, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Wen Su, Yu-Kuan Lin, Shih-Hao Lin, Lien-Jung Hung, Ping-Wei Wang
  • Publication number: 20240074041
    Abstract: A circuit board includes a substrate and a metallic layer. A first area and at least one second area are defined on a portion of the substrate, the second area is located outside the first area. The metallic layer includes first test lines disposed on the first area and second test lines disposed on the second area. A first test pad of each of the first test lines has a first width, and a second test pad of each of the second test lines has a second width. The second width is greater than the first width such that probes of an electrical testing tool can contact the first and second test pads on the circuit board correctly during electrical testing.
    Type: Application
    Filed: August 16, 2023
    Publication date: February 29, 2024
    Inventors: Gwo-Shyan Sheu, Kuo-Liang Huang, Hsin-Hao Huang, Pei-Wen Wang, Yu-Chen Ma
  • Publication number: 20130069893
    Abstract: A method of controlling an electronic device, an electronic device and a computer program product using the method are provided. The method includes displaying part or all of a ring and a function image outside the ring on the touch screen while the electronic device is in a user-interface lock state, detecting a user input applied to the function image and/or the ring on or near the touch screen, moving the function image and/or the ring in accordance with the user input, wherein the function image corresponds to an application, transitioning the electronic device to a user-interface unlock state and launching the application if the function image and the ring approach each other within a predetermined distance, and maintaining the electronic device in the user-interface lock state if the function image and the ring do not approach each other within the predetermined distance.
    Type: Application
    Filed: September 13, 2012
    Publication date: March 21, 2013
    Applicant: HTC CORPORATION
    Inventors: David Brinda, Drew Bamford, Matthew Joseph Cielak, Ying-Ju Chen, David Folchi, Chi-Min Lee, Hsin-Wen Wang, Ching-Tung Liu