Patents by Inventor Hsin-Ya Wang

Hsin-Ya Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing dynamic random access memory
    Patent number: 11374011
    Abstract: A method for manufacturing a DRAM includes: forming a hard mask layer on a substrate with an opening therein; forming a dielectric layer on a sidewall of the opening; forming a first barrier layer and a first conductor layer in the opening; performing a first dry etching and a first wet etching processes to respectively partially remove the first barrier layer and the first conductor layer, to expose the dielectric layer on upper sidewall; forming a second barrier layer in the opening; forming a mask layer in the opening to cover the second barrier layer; removing a part of the second barrier layer and the mask layer to expose the dielectric layer on the upper sidewall of the opening; and forming a second conductor layer in the opening.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: June 28, 2022
    Assignee: Winbond Electronics Corp.
    Inventors: Akira Kuroda, Hsin-Ya Wang, Chang-Han Tsai, Ming-Ting Cai