Patents by Inventor Hsin-Yen Huang

Hsin-Yen Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210313223
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 7, 2021
    Inventors: Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20210305143
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.
    Type: Application
    Filed: March 24, 2020
    Publication date: September 30, 2021
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chih-Yen CHEN, Hsin-Chang TSAI, Chun-Yi WU, Chia-Ching HUANG, Chih-Jen HSIAO, Wei-Chan CHANG, Francois HEBERT
  • Patent number: 11133246
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: September 28, 2021
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Chih-Yen Chen, Hsin-Chang Tsai, Chun-Yi Wu, Chia-Ching Huang, Chih-Jen Hsiao, Wei-Chan Chang, Francois Hebert
  • Patent number: 11099358
    Abstract: A photographing lens assembly includes six lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The second lens element has positive refractive power. The third lens element has an image-side surface being concave in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, and the image-side surface of the sixth lens element has at least one inflection point.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: August 24, 2021
    Assignee: LARGAN PRECISION CO., LTD.
    Inventors: Chun-Yen Chen, Cheng-Chen Lin, Hsin-Hsuan Huang
  • Publication number: 20210249299
    Abstract: A method and structure for forming a barrier-free interconnect layer includes patterning a metal layer disposed over a substrate to form a patterned metal layer including one or more trenches. In some embodiments, the method further includes selectively depositing a barrier layer on metal surfaces of the patterned metal layer within the one or more trenches. In some examples, and after selectively depositing the barrier layer, a dielectric layer is deposited within the one or more trenches. Thereafter, the selectively deposited barrier layer may be removed to form air gaps between the patterned metal layer and the dielectric layer.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Inventors: Cheng-Chin LEE, Shao-Kuan LEE, Hsin-Yen HUANG, Hai-Ching CHEN, Shau-Lin SHUE
  • Patent number: 11075113
    Abstract: A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: July 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Kuan Lee, Cheng-Chin Lee, Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 11069526
    Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.
    Type: Grant
    Filed: October 26, 2018
    Date of Patent: July 20, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Kuan Lee, Hsin-Yen Huang, Yung-Hsu Wu, Cheng-Chin Lee, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 11049811
    Abstract: A plurality of high-k metal gate (HKMG) structures is formed over a substrate. The (HKMG) structures are separated by a plurality of gaps. The HKMG structures each include a first dielectric layer at an upper surface of the HKMG structure. The gaps are filled with a first conductive material. A portion of the first conductive material is removed in each of the gaps through an etching-back process. A metal oxide layer is formed using a spin-on deposition process. The metal oxide layer is formed over the (HKMG) structures and over the first conductive material. A second dielectric layer is formed over the metal oxide layer. An opening is etched in the second dielectric layer. The opening is etched through the second dielectric layer and through the metal oxide layer. The opening is filled with a second conductive material.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: June 29, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Lin Teng, Jung-Hsun Tsai, Kai-Fang Cheng, Hsin-Yen Huang, Hai-Ching Chen, Tien-I Bao
  • Publication number: 20210193505
    Abstract: Some embodiments relate to a semiconductor structure including a first inter-level dielectric (ILD) structure overlying a substrate. A conductive contact directly overlies the substrate and is disposed within the first ILD structure. A conductive wire directly overlies the conductive contact. A conductive capping layer overlies the conductive wire such that the conductive capping layer continuously extends along an upper surface of the conductive wire. A second ILD structure overlies the conductive capping layer. The second ILD structure is disposed along opposing sides of the conductive wire. A pair of air-gaps are disposed within the second ILD structure. The conductive wire is spaced laterally between the pair of air-gaps. A dielectric capping layer is disposed along an upper surface of the conductive capping layer. The dielectric capping layer is spaced laterally between the pair of air-gaps and is laterally offset from an upper surface of the first ILD structure.
    Type: Application
    Filed: May 18, 2020
    Publication date: June 24, 2021
    Inventors: Hsin-Yen Huang, Chi-Lin Teng, Hai-Ching Chen, Shau-Lin Shue, Shao-Kuan Lee, Cheng-Chin Lee, Ting-Ya Lo
  • Publication number: 20210193566
    Abstract: Some embodiments relate to a semiconductor structure including an inter-level dielectric (ILD) layer overlying a substrate. A conductive via is disposed within the ILD layer. A plurality of conductive wires overlie the ILD layer. The plurality of conductive wires includes a first conductive wire laterally offset a second conductive wire. A dielectric structure is disposed laterally between the first and second conductive wires. The dielectric structure includes a first dielectric liner, a dielectric layer, and an air-gap. The air-gap is disposed between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is disposed along an upper surface of the dielectric structure. The dielectric capping layer continuously extends between opposing sidewalls of the dielectric structure and is laterally offset from the plurality of conductive wires.
    Type: Application
    Filed: May 28, 2020
    Publication date: June 24, 2021
    Inventors: Ting-Ya Lo, Chi-Lin Teng, Hai-Ching Chen, Hsin-Yen Huang, Shau-Lin Shue, Shao-Kuan Lee, Cheng-Chin Lee
  • Publication number: 20210175119
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.
    Type: Application
    Filed: February 22, 2021
    Publication date: June 10, 2021
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang, Chia-Tien Wu, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20210134666
    Abstract: A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.
    Type: Application
    Filed: December 14, 2020
    Publication date: May 6, 2021
    Inventors: Hsin-Yen HUANG, Kai-Fang CHENG, Chi-Lin TENG, Shao-Kuan LEE, Hai-Ching CHEN
  • Publication number: 20210082814
    Abstract: A method for forming an interconnect structure is provided. The method for forming the interconnect structure includes forming a first dielectric layer over a substrate, forming a first conductive feature through the first dielectric layer, forming a first blocking layer on the first conductive feature, forming a first etching stop layer over the first dielectric layer and exposing the first blocking layer, removing at least a portion of the first blocking layer, forming a first metal bulk layer over the first etching stop layer and the first conductive feature, and etching the first metal bulk layer to form a second conductive feature electrically connected to the first conductive feature.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING, CO., LTD.
    Inventors: Shao-Kuan Lee, Cheng-Chin Lee, Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20210082802
    Abstract: A method for forming an interconnect structure is provided. The method for forming the interconnect structure includes forming a metal line over a substrate, forming a first dielectric layer surrounding the metal line, selectively forming a dielectric block over the first dielectric layer without forming the dielectric block on the metal line, forming a second dielectric layer over the dielectric block and the metal line, etching the second dielectric layer to form a via hole corresponding to the metal line, and filling the via hole with a conductive material.
    Type: Application
    Filed: September 16, 2019
    Publication date: March 18, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen HUANG, Shao-Kuan LEE, Cheng-Chin LEE, Hai-Ching CHEN, Shau-Lin SHUE
  • Publication number: 20210066187
    Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.
    Type: Application
    Filed: August 27, 2019
    Publication date: March 4, 2021
    Inventors: Shao-Kuan Lee, Hai-Ching Chen, Hsin-Yen Huang, Shau-Lin Shue, Cheng-Chin Lee
  • Patent number: 10930551
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: February 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang, Chia-Tien Wu, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20200411374
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang, Chia-Tien Wu, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 10867847
    Abstract: A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Kai-Fang Cheng, Chi-Lin Teng, Shao-Kuan Lee, Hai-Ching Chen
  • Patent number: 10867850
    Abstract: A method for forming a semiconductor structure is provided. A substrate including a metal portion and a low-k dielectric portion formed thereon is provided. The metal portion adjoins the low-k dielectric portion. A SAM solution is prepared. The SAM solution includes at least one blocking compound and a multi-solvent system. The multi-solvent system includes an alcohol and an ester. The SAM solution is applied over surfaces of the metal portion and the low-k dielectric portion. The substrate is heated to remove the multi-solvent system of the SAM solution to form a blocking layer on one of the metal portion and the low-k dielectric portion. A material layer is selectively deposited on the other one of the metal portion and the low-k dielectric portion using the blocking layer as a stencil. The blocking layer is removed from the substrate.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Cheng-Chin Lee, Shao-Kuan Lee, Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 10867843
    Abstract: A method for fabrication a semiconductor device and a system utilizing the same are provided. In the method for fabrication the semiconductor device, at first, a semiconductor structure having a metal conducting structure is provided. Next, a dielectric layer is deposited over the metal conducting structure. Then, an etching process is performed on the dielectric layer by using a fluorine-containing gas so as to form an opening, in which fluorine-containing compounds are formed on a surface of the opening during the etching process. And then, a pre-cleaning process is performed by using UV radiation so as to remove the fluorine-containing compounds. After the pre-cleaning process is performed, a cleaning process is performed to clean the surface of the opening.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Kuan Lee, Hsin-Yen Huang, Hai-Ching Chen