Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.

Abstract: An interconnect structure is provided. The interconnect structure includes a first via in a first dielectric layer, a first metal line on and electrically connected to the first via, a first etching stop layer over the first dielectric layer, a second metal line over the first etching stop layer, and an encapsulating layer. The encapsulating layer includes a first vertical portion along a sidewall of the first metal line, a horizontal portion along an upper surface of the first etching stop layer, and a second vertical portion along a sidewall of the second metal line. The interconnect structure also includes a second dielectric layer nested within the encapsulating layer.

Abstract: An interconnect structure is provided. The interconnect structure includes a first metal line and a second metal line surrounded by a first dielectric layer, a dielectric block over a portion of the first dielectric layer between the first metal line and the second metal line, and a second dielectric layer over the dielectric block, the first metal line and the second metal line. A bottom surface of the second dielectric layer is lower than a top surface of the dielectric block. The interconnect structure also includes a first via surrounded by the second dielectric layer and electrically connected to the first metal line.

Abstract: Some embodiments of the present disclosure relate to an integrated chip, including a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. A pair of metal lines are disposed over the dielectric layer and laterally spaced apart from one another by a cavity. A barrier layer structure extends along nearest neighboring sidewalls of the pair of metal lines such that the cavity is defined by inner sidewalls of the barrier layer structure and a top surface of the dielectric layer.

Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: In some embodiments, the present disclosure relates an integrated chip including a substrate. A conductive interconnect feature is arranged over the substrate. The conductive interconnect feature has a base feature portion with a base feature width and an upper feature portion with an upper feature width. The upper feature width is narrower than the base feature width such that the conductive interconnect feature has tapered outer feature sidewalls. An interconnect via is arranged over the conductive interconnect feature. The interconnect via has a base via portion with a base via width and an upper via portion with an upper via width. The upper via width is wider than the base via width such that the interconnect via has tapered outer via sidewalls.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A millimeter wave radar apparatus determining a fall posture is applied to a human body. The millimeter wave radar apparatus includes a microprocessor and a millimeter wave radar. The millimeter wave radar is electrically connected to the microprocessor. The millimeter wave radar is configured to transmit a radar wave to the human body. The millimeter wave radar is configured to receive a reflected radar wave reflected from the human body based on the radar wave. The microprocessor is configured to obtain a point cloud information based on the reflected radar wave. The microprocessor is configured to utilize the point cloud information to determine whether the human body is in the fall posture.

Abstract: A surveillance method, a surveillance apparatus, and a marking module are applied to an active burglarproof system. The surveillance method includes the following steps. Determine whether a first wireless signal related to a marking module is received in a first sensing region, to produce a first determination result. Determine whether the first wireless signal is received in a second sensing region, to produce a second determination result. Selectively generate a warning signal according to the first determination result and the second determination result.

Abstract: A surveillance method, a surveillance apparatus, and a marking module are applied to an active burglarproof system. The surveillance method includes the following steps. Determine whether a first wireless signal related to a marking module is received in a first sensing region, to produce a first determination result. Determine whether the first wireless signal is received in a second sensing region, to produce a second determination result. Selectively generate a warning signal according to the first determination result and the second determination result.