Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a plurality of conductive interconnects arranged within a dielectric structure having a plurality of inter-level dielectric (ILD) layers stacked onto one another. A heat pipe vertically extends through the plurality of ILD layers. A high thermal conductivity layer is sandwiched between neighboring ones of the plurality of ILD layers. The high thermal conductivity layer laterally extends from over one or more of the plurality of conductive interconnects to the heat pipe.

Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.

Abstract: An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.

Abstract: The semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first dielectric layer, a first metal layer, a second metal layer, a first etching stop layer, a second etching stop layer, a second dielectric layer, a first via and a second via. The first metal layer and the second metal are embedded in the first dielectric layer. The first etching stop layer is disposed on the first dielectric layer. The second etching stop layer is disposed on the first etching stop layer. The second dielectric layer is disposed on the second etching stop layer. The first via and the second via are embedded in the second dielectric layer. A width of the second etching stop layer is smaller a width of the first etching stop layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first low dielectric constant (low-k) layer, a first metal layer, a metal cap layer, a dielectric on dielectric (DoD) layer, an etch stop layer (ESL), a second low-k layer, a metal via and a second metal layer. The dielectric constant of the first low-k layer is less than 4. The first metal layer is embodied in the first low-k layer. The first low-k layer exposes the first metal layer. The metal cap layer is disposed on the first metal layer. The DoD layer is disposed on the first low-k layer. The etch stop layer is disposed on the metal cap layer and the DoD layer. The second low-k layer is disposed above the etch stop layer. The metal via is embodied in the second low-k layer and connected to the first metal layer.

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

Abstract: An image capturing device is provided. The image capturing device includes an aperture unit, an image sensor, and a first lens unit. The first lens unit includes a first light-entering end and a first light-exiting end for focusing an external light on the image sensor. The aperture unit, the first lens unit, and the image sensor are sequentially arranged in a travel direction of the external light.

Abstract: A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer.

Abstract: An optical system is provided. The optical system includes a first optical module with a first light-entering hole, a second optical module with a second light-entering hole, and a third optical module with a third light-entering hole. The second light-entering hole is close to the first light-entering hole and the third light-entering hole. The focal length of the second optical module is different from the focal length of the first optical module and the focal length of the third optical module.

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

Abstract: An optical system is provided. The optical system includes a first optical module with a first light-entering hole, a second optical module with a second light-entering hole, and a third optical module with a third light-entering hole. The second light-entering hole is close to the first light-entering hole and the third light-entering hole. The focal length of the second optical module is different from the focal length of the first optical module and the focal length of the third optical module.

Abstract: An image capturing device is provided. The image capturing device includes an aperture unit, an image sensor, and a first lens unit. The first lens unit includes a first light-entering end and a first light-exiting end for focusing an external light on the image sensor. The aperture unit, the first lens unit, and the image sensor are sequentially arranged in a travel direction of the external light.

Abstract: The present invention relates to an optical system, including a fixed portion, a movable portion, an aperture unit and a first driving assembly. The movable portion is movably connected to the fixed portion and used to hold an optical element. The aperture unit is disposed on the movable portion and corresponds to the optical element. The first driving assembly is disposed in the fixed portion to drive the movable portion to move relative to the fixed portion.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt. % to about 10 wt. % of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C2-C10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

Abstract: The present invention relates to an optical system, including a fixed portion, a movable portion, an aperture unit and a first driving assembly. The movable portion is movably connected to the fixed portion and used to hold an optical element. The aperture unit is disposed on the movable portion and corresponds to the optical element. The first driving assembly is disposed in the fixed portion to drive the movable portion to move relative to the fixed portion.