Abstract: A semiconductor device includes source and drain regions, a channel region between the source and drain regions, and a gate structure over the channel region. The gate structure includes a gate dielectric over the channel region, a work function metal layer over the gate dielectric and comprising iodine, and a fill metal over the work function metal layer.

Abstract: Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disposed over the high-k layer, and a barrier layer disposed over the N-type work function metal layer. The barrier layer includes at least one first film containing TiAlN, TaAlN or AlN.

Abstract: Methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (Al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (AlW); and a fill material over the first work function tuning layer.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nano structure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. The gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.

Abstract: A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate. The first transistor includes a first gate structure, and the second transistor includes a second gate structure. The first gate structure includes a first high-k layer, a first work function layer, an overlying work function layer, and a first capping layer sequentially formed on the substrate. The second gate structure comprising a second high-k layer, a second work function layer, and a second capping layer sequentially formed on the substrate. The first capping layer and the second capping layer comprise materials having higher resistant to oxygen or fluorine than materials of the second work function layer and the overlying work function layer.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.

Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.

Abstract: A series of novel bis(hydroxymethyl) alkanoate derivatives of curcuminoids were designed, and synthesized, which show anticancer activity, and in particular to breast cancer, colon cancer, and prostate cancer.

Abstract: A series of novel bis(hydroxymethyl) alkanoate derivatives of curcuminoids were designed, and synthesized, which show anticancer activity, and in particular to breast cancer, colon cancer, and prostate cancer.

Abstract: The present invention is related to novel 20-sulfonylamidine derivatives of camptothecin (1), method of synthesizing the same, and use thereof as an antitumor agent, for examples an antitumor agent for treating nasopharyngeal, lung, breast or prostate cancer.

Abstract: The present invention is related to novel 20-sulfonylamidine derivatives of camptothecin (1), method of synthesizing the same, and use thereof as an antitumor agent, for examples an antitumor agent for treating nasopharyngeal, lung, breast or prostate cancer.

Abstract: The present invention relates to a Vibrio harveyi-specific binding Dscam of shrimps, a method for identification thereof and a use thereof. Primarily, Dscam cDNAs are prepared from V. harveyi-challenged shrimps. A database is established with various Dscam isoforms therein by means of numerous cloning and sequencing. After a phylogenetic analysis, a plurality of candidate Dscam isoforms is selected. Each recombinant protein of candidate Dscam isoforms is expressed through an expression system. Finally, the binding affinity between V. harveyi and each recombinant protein of candidate Dscam isoforms is measured to further selection of a V. harveyi-specific binding Dscam and the amino acid sequence thereof. Accordingly, the Dscam can be specifically binding to V. harveyi for eliminating or reducing V. harveyi.

Abstract: The present invention provides a series of derivatives of stilbenoid which are useful as new inhibitory agents against head and neck squamous cell carcinoma (HNSCC) and hepatoma.

Abstract: The present invention relates to a Vibrio harveyi-specific binding Dscam of shrimps, a method for identification thereof and a use thereof. Primarily, Dscam cDNAs are prepared from V. harveyi-challenged shrimps. A database is established with various Dscam isoforms therein by means of numerous cloning and sequencing. After a phylogenetic analysis, a plurality of candidate Dscam isoforms is selected. Each recombinant protein of candidate Dscam isoforms is expressed through an expression system. Finally, the binding affinity between V. harveyi and each recombinant protein of candidate Dscam isoforms is measured to further selection of a V. harveyi-specific binding Dscam and the amino acid sequence thereof. Accordingly, the Dscam can be specifically binding to V. harveyi for eliminating or reducing V. harveyi.

Abstract: The present invention provides a series of derivatives of stilbenoid which are useful as new inhibitory agents against head and neck squamous cell carcinoma (HNSCC) and hepatoma.