Abstract: A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures.

Abstract: A method for fabricating an electronic package is provided. A plurality of packaging structures are provided, each of which having a carrier and at least one electronic component disposed on the carrier. The plurality of packaging structures are disposed on a supporting plate. An encapsulation layer is formed on the supporting plate and encapsulates the plurality of packaging structures. Even if there are various types of electronic packages of different specifications in the market, the molds that the encapsulation layer uses can still be developed for a supporting plate of a certain specification. Therefore, the fabrication cost of the electronic package is reduced.

Abstract: A method of manufacturing a memory structure including the following steps is provided. A first pad layer is formed on a substrate. Isolation structures are formed in the first pad layer and the substrate. At least one shape modification treatment is performed on the isolation structures. Each shape modification treatment includes the following steps. A first etching process is performed on the first pad layer to reduce a height of the first pad layer and to form first openings exposing sidewalls of the isolation structures. After the first etching process is performed, a second etching process is performed on the isolation structures to modify shapes of the sidewalls of the isolation structures exposed by the first openings. The first pad layer is removed to form a second opening between two adjacent isolation structures.

Abstract: An electronic package is provided, including: a first carrying structure having a first circuit layer; a package module disposed on the first carrying structure and electrically connected to the first circuit layer; a first electronic component disposed on the first carrying structure and electrically connected to the first circuit layer; and a second electronic component stacked on and electrically connected to the first electronic component. As the second electronic component is stacked with the first electronic component, a surface area of the first carrying structure that the first and second electronic components occupy is reduced, and the electronic package can have sufficient space to accommodate the package modules. A method for fabricating an electronic package is also provided.

Abstract: A method for fabricating an electronic package is provided. A plurality of packaging structures are provided, each of which having a carrier and at least one electronic component disposed on the carrier. The plurality of packaging structures are disposed on a supporting plate. An encapsulation layer is formed on the supporting plate and encapsulates the plurality of packaging structures. Even if there are various types of electronic packages of different specifications in the market, the molds that the encapsulation layer uses can still be developed for a supporting plate of a certain specification. Therefore, the fabrication cost of the electronic package is reduced.

Abstract: An electronic package is provided, including: a first carrying structure having a first circuit layer; a package module disposed on the first carrying structure and electrically connected to the first circuit layer; a first electronic component disposed on the first carrying structure and electrically connected to the first circuit layer; and a second electronic component stacked on and electrically connected to the first electronic component. As the second electronic component is stacked with the first electronic component, a surface area of the first carrying structure that the first and second electronic components occupy is reduced, and the electronic package can have sufficient space to accommodate the package modules. A method for fabricating an electronic package is also provided.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A package structure having at least an MEMS element is provided, including a chip having electrical connecting pads and the MEMS element; a lid disposed on the chip to cover the MEMS element and having a metal layer provided thereon; first sub-bonding wires electrically connecting to the electrical connecting pads; second sub-bonding wires electrically connecting to the metal layer; an encapsulant disposed on the chip, wherein the top ends of the first and second sub-bonding wires are exposed from the encapsulant; and metallic traces disposed on the encapsulant and electrically connecting to the first sub-bonding wires. The package structure advantageously features reduced size, relatively low costs, diverse bump locations, and an enhanced EMI shielding effect.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A semiconductor package includes: a dielectric layer having opposite first and second surfaces; a semiconductor chip embedded in the dielectric layer and having a plurality of electrode pads; a plurality of first metal posts disposed on the electrode pads of the semiconductor chip, respectively, such that top ends of the first metal posts are exposed from the first surface; at least a second metal post penetrating the dielectric layer such that two opposite ends of the second metal post are exposed from the first and second surfaces, respectively; a first circuit layer formed on the first surface for electrically connecting the first and second metal posts; and a second circuit layer formed on the second surface for electrically connecting the second metal post. The semiconductor package dispenses with conventional laser ablation and electroplating processes for forming conductive posts in a molding compound, thereby saving fabrication time and cost.

Abstract: A CSP includes: a hard board having a first wiring layer with conductive pads; a plurality of conductive elements disposed on at least a portion of the conductive pads; an electronic component having opposite active and inactive surfaces and being mounted on the hard board via the inactive surface; an encapsulating layer disposed on the hard board for encapsulating the conductive elements and electronic component, the active surface of the electronic component and the surfaces of the conductive elements being exposed through the encapsulating layer; a first dielectric layer and a third wiring layer disposed on the encapsulating layer, the third wiring layer being electrically connected to the conductive elements and the electronic component and further electrically connected to the first wiring layer through the conductive elements, thereby obtaining a stacked connection structure without the need of PTHs and using the hard board as a main structure to avoid warpage.

Abstract: A package structure having at least an MEMS element is provided, including a chip having electrical connecting pads and the MEMS element; a lid disposed on the chip to cover the MEMS element and having a metal layer provided thereon; first sub-bonding wires electrically connecting to the electrical connecting pads; second sub-bonding wires electrically connecting to the metal layer; an encapsulant disposed on the chip, wherein the top ends of the first and second sub-bonding wires are exposed from the encapsulant; and metallic traces disposed on the encapsulant and electrically connecting to the first sub-bonding wires. The package structure advantageously features reduced size, relatively low costs, diverse bump locations, and an enhanced EMI shielding effect.

Abstract: A semiconductor package includes: a dielectric layer having opposite first and second surfaces; a semiconductor chip embedded in the dielectric layer and having a plurality of electrode pads; a plurality of first metal posts disposed on the electrode pads of the semiconductor chip, respectively, such that top ends of the first metal posts are exposed from the first surface; at least a second metal post penetrating the dielectric layer such that two opposite ends of the second metal post are exposed from the first and second surfaces, respectively; a first circuit layer formed on the first surface for electrically connecting the first and second metal posts; and a second circuit layer formed on the second surface for electrically connecting the second metal post. The semiconductor package dispenses with conventional laser ablation and electroplating processes for forming conductive posts in a molding compound, thereby saving fabrication time and cost.

Abstract: A package structure is provided, including: a substrate having a ground pad and an MEMS element; a lid disposed on the substrate for covering the MEMS element; a wire segment electrically connected to the ground pad; an encapsulant encapsulating the lid and the wire segment; and a circuit layer formed on the encapsulant and electrically connected to the wire segment and the lid so as to commonly ground the substrate and the lid, thereby releasing accumulated electric charges on the lid so as to improve the reliability of the MEMS system and reduce the number of I/O connections.

Abstract: A package structure having at least an MEMS element is provided, including a chip having electrical connecting pads and the MEMS element; a lid disposed on the chip to cover the MEMS element and having a metal layer provided thereon; first sub-bonding wires electrically connecting to the electrical connecting pads; second sub-bonding wires electrically connecting to the metal layer; an encapsulant disposed on the chip, wherein the top ends of the first and second sub-bonding wires are exposed from the encapsulant; and metallic traces disposed on the encapsulant and electrically connecting to the first sub-bonding wires. The package structure advantageously features reduced size, relatively low costs, diverse bump locations, and an enhanced EMI shielding effect.

Abstract: A semiconductor package includes: a dielectric layer having opposite first and second surfaces; a semiconductor chip embedded in the dielectric layer and having a plurality of electrode pads; a plurality of first metal posts disposed on the electrode pads of the semiconductor chip, respectively, such that top ends of the first metal posts are exposed from the first surface; at least a second metal post penetrating the dielectric layer such that two opposite ends of the second metal post are exposed from the first and second surfaces, respectively; a first circuit layer formed on the first surface for electrically connecting the first and second metal posts; and a second circuit layer formed on the second surface for electrically connecting the second metal post. The semiconductor package dispenses with conventional laser ablation and electroplating processes for forming conductive posts in a molding compound, thereby saving fabrication time and cost.

Abstract: A method of fabricating a semiconductor package is provided, including: disposing a semiconductor element on a carrier; forming an encapsulant on the carrier to encapsulant the semiconductor element; forming at least one through hole penetrating the encapsulant; forming a hollow conductive through hole in the through hole and, at the same time, forming a circuit layer on an active surface of the semiconductor element and the encapsulant; forming an insulating layer on the circuit layer; and removing the carrier. By forming the conductive through hole and the circuit layer simultaneously, the invention eliminates the need to form a dielectric layer before forming the circuit layer and dispenses with the conventional chemical mechanical polishing (CMP) process, thus greatly improving the fabrication efficiency.

Abstract: A package structure includes a micro-electromechanical element having a plurality of electrical contacts; a package layer enclosing the micro-electromechanical element and the electrical contacts, with a bottom surface of the micro-electromechanical element exposed from a lower surface of the package layer; a plurality of bonding wires embedded in the package layer, each of the bonding wires having one end connected to one of the electrical contacts, and the other end exposed from the lower surface of the package layer; and a build-up layer structure provided on the lower surface of the package layer, the build-up layer including at least one dielectric layer and a plurality of conductive blind vias formed in the dielectric layer and electrically connected to one ends of the bonding wires. The package structure is easier to accurately control the location of an external electrical contact, and the compatibility of the manufacturing procedures is high.

Abstract: A fabrication method of a package structure having at least an MEMS element is provided, including: preparing a wafer having electrical connection pads and the at least an MEMS element; disposing lids for covering the at least an MEMS element, the lids having a metal layer formed thereon; electrically connecting the electrical connection pads and the metal layer with bonding wires; forming an encapsulant for covering the lids, bonding wires, electrical connection pads and metal layer; removing portions of the encapsulant to separate the bonding wires each into first and second sub-bonding wires, wherein top ends of the first and second sub-bonding wires are exposed, the first sub-bonding wires electrically connecting to the electrical connection pads, and the second sub-bonding wires electrically connecting to the metal layer; forming metallic traces on the encapsulant for electrically connecting to the first sub-bonding wires; forming bumps on the metallic traces; and performing a singulation process.