Patents by Inventor Hsin-Ying Tsai

Hsin-Ying Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210225769
    Abstract: The invention provides an integrated circuit (IC) structure including a function circuit and a power ground (P/G) mesh electrically connected with the function circuit. The P/G mesh includes a first metal layer and a second metal layer. The first metal layer and the second metal layer are respectively disposed with a plurality of ground wires and a plurality of power wires. The power wires of the first metal layer are electrically connected with the power wires of the second metal layer through a plurality of first vias, and the ground wires of the first metal layer are electrically connected with the ground wires of the second metal layer through a plurality of second vias. A wire impedance of the first metal layer is different from a wire impedance of the second metal layer. The IC structure can achieve reduction of an IR-drop.
    Type: Application
    Filed: January 20, 2021
    Publication date: July 22, 2021
    Applicant: ALi Corporation
    Inventors: Hsin-Ying Tsai, Tzu-Wei Lan, Meng-Che Li, Wei-Hsien Fang