Abstract: Techniques are provided herein to form semiconductor devices on a substrate with an alternative crystallographic surface orientation. The techniques are particularly useful with respect to gate-all-around and forksheet transistor configurations. A substrate having a (110) crystallographic surface orientation forms the basis for the growth of alternating types of semiconductor layers. Both n-channel and p-channel transistors may be fabricated using silicon nanoribbons formed from some of the alternating semiconductor layers. The crystallographic surface orientation of the Si nanoribbons will reflect the same crystallographic surface orientation of the substrate, which leads to a higher hole mobility across the Si nanoribbons of the p-channel devices and an overall improved CMOS device performance.

Abstract: A horizontal semiconductor device includes an electrically conductive substrate having a first surface, a buffer layer disposed on the first surface of the substrate, an epitaxial unit disposed on the buffer layer opposite to the substrate, a first electrode unit disposed on the epitaxial unit, and a second electrode unit. The substrate has an exposed region that is exposed from the buffer layer and the epitaxial unit. The second electrode unit includes a first conductive member disposed on the epitaxial unit and spaced apart from the first electrode unit, and a second conductive member extending from the first conductive member to the exposed region.

Abstract: An apparatus of adding high vapor pressure magnesium to a steel liquid, includes a magnesium additive device and a tube furnace. The magnesium additive device includes a storage barrel, a conveying pipe, a control valve, and an insertion tube. A method of adding high vapor pressure magnesium to a steel liquid, includes placing the magnesium additive device in the tube furnace, and delivering pure magnesium particles into the storage barrel. When the temperature at the mediate lower position of the conveying pipe is increased to reach a preset value, the control valve is opened to pour the pure magnesium particles into the conveying pipe to form a magnesium vapor, and an argon regulating valve is opened to introduce the argon into the conveying pipe so as to add the magnesium vapor to a steel liquid by carrying of the argon.

Abstract: An apparatus of adding high vapor pressure magnesium to a steel liquid, includes a magnesium additive device and a tube furnace. The magnesium additive device includes a storage barrel, a conveying pipe, a control valve, and an insertion tube. A method of adding high vapor pressure magnesium to a steel liquid, includes placing the magnesium additive device in the tube furnace, and delivering pure magnesium particles into the storage barrel. When the temperature at the mediate lower position of the conveying pipe is increased to reach a preset value, the control valve is opened to pour the pure magnesium particles into the conveying pipe to form a magnesium vapor, and an argon regulating valve is opened to introduce the argon into the conveying pipe so as to add the magnesium vapor to a steel liquid by carrying of the argon.