Patents by Inventor Hsin-Yu Chen

Hsin-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250246578
    Abstract: Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.
    Type: Application
    Filed: March 19, 2025
    Publication date: July 31, 2025
    Inventors: Hsi-Cheng HSU, Jui-Chun WENG, Ching-Hsiang HU, Ji-Hong CHIANG, Kuo-Hao LEE, Chia-Yu LIN, Chia-Chun HUNG, Yen-Chieh TU, Chien-Tai SU, Hsin-Yu CHEN
  • Patent number: 12374258
    Abstract: A method involves measuring, for an optical property of the display panel for an input gray level and at a first refresh rate, first and second values at respective first and second ambient brightness levels. The method also involves determining a compensation factor for the input gray level at the first refresh rate. The method further involves determining a modified gamma value at a second refresh rate, wherein the modified gamma value reduces a perceived optical defect of the display panel when operating at the second refresh rate by maintaining a consistent delta difference in values for the optical property between the first and second refresh rates at different ambient brightness levels. The method additionally involves storing the modified gamma value, where the device is configured to adjust input display data using the modified gamma value when transitioning from the first refresh rate to the second refresh rate.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: July 29, 2025
    Assignee: Google LLC
    Inventors: Chien-Hui Wen, Hsin-Yu Chen
  • Publication number: 20250187995
    Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to improve the growth of tomato under low light conditions. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then infused to the soil containing the tomato seeds or young seedlings. Optionally, the KHP solution can be diluted by water at different ratios as disclosed in the specification.
    Type: Application
    Filed: May 6, 2024
    Publication date: June 12, 2025
    Applicant: CH Biotech R&D Co., Ltd.
    Inventors: Iou-Zen CHEN, Hsin-Yu CHEN, Yu-Yi WU
  • Publication number: 20250182664
    Abstract: A method may include measuring an optical property of a display panel for an input gray level at a first refresh rate. The method may also include measuring the optical property for a plurality of candidate gray levels at a second refresh rate. The method may further include selecting, based on the measured optical properties of the display panel, a corresponding gray level for the input gray level, wherein the corresponding gray level is selected from the plurality of candidate gray levels. The method may also include storing, at the device, the corresponding gray level for the input gray level, wherein subsequent to the storing, the device is configured to adjust input display data using the corresponding gray level for the input gray level when the display panel is transitioning from the first refresh rate to the second refresh rate.
    Type: Application
    Filed: February 5, 2025
    Publication date: June 5, 2025
    Inventors: Chien-Hui Wen, Hsin-Yu Chen
  • Patent number: 12322680
    Abstract: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: June 3, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Ming-Tsu Chung, Hsiaoyun Lo, Hong-Ye Shih, Chia-Yin Chen, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Publication number: 20250169169
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.
    Type: Application
    Filed: January 15, 2025
    Publication date: May 22, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hao Lin, Hsin-Yu Chen, Shou-Wei Hsieh
  • Publication number: 20250157395
    Abstract: In general, the subject matter described in this disclosure can be embodied in methods, systems, and program products for operating a display device. A pixel of a the display device is refreshed while the display device is operating at a first refresh rate, including by: turning off emission of the LED; programming a driving transistor that drives the LED; and turning on emission of the LED a first delay of time after the programming of the driving transistor. The pixel of the display device is refreshed while the display device is operating at a second refresh rate, including by: turning off emission of the LED; programming the driving transistor that drives the LED; and turning on emission of the LED a second delay of time after the programming of the driving transistor.
    Type: Application
    Filed: April 29, 2022
    Publication date: May 15, 2025
    Inventors: Sangmoo CHOI, Hsin-Yu CHEN
  • Patent number: 12300142
    Abstract: An example method includes determining, for a device having a display component configured to operate at multiple brightness levels and for a range of DBVs, a gamma value offset to a default gamma value at the second brightness level. The method includes determining, for a tap point representative of the range, a brightness value offset to a default brightness value at the second brightness level. The method includes storing the gamma value offset and the brightness value offset. Subsequent to the storing, the device is configured to transition, in response to a fingerprint authentication triggering event, the display component from a first brightness level to a second brightness level by: overriding a default gamma value based on the gamma value offset, and displaying a portion of the display component by applying a value offset to a default brightness value at the second brightness level based on the brightness value offset.
    Type: Grant
    Filed: July 30, 2021
    Date of Patent: May 13, 2025
    Assignee: Google LLC
    Inventors: Chien-Hui Wen, Hsin-Yu Chen
  • Publication number: 20250143323
    Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to enhance tomato plant's growth and production yield in hot weather. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then infused to the soil in which the tomato seedlings/plants are planted; the solution can also be sprayed to the leaf surface of tomato plants. Optionally, the KHP solution can be diluted by water, as disclosed in the specification, for applying to the soil around the tomato seedlings/plants and for spraying to leaf surface of tomato plants.
    Type: Application
    Filed: January 31, 2024
    Publication date: May 8, 2025
    Applicant: CH Biotech R&D Co., Ltd.
    Inventors: Iou-Zen CHEN, Hsin-Yu CHEN, Jie-Chao YOU, Nai-Hua YE
  • Patent number: 12283568
    Abstract: Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.
    Type: Grant
    Filed: July 5, 2023
    Date of Patent: April 22, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Cheng Hsu, Jui-Chun Weng, Ching-Hsiang Hu, Ji-Hong Chiang, Kuo-Hao Lee, Chia-Yu Lin, Chia-Chun Hung, Yen-Chieh Tu, Chien-Tai Su, Hsin-Yu Chen
  • Patent number: 12277883
    Abstract: An example device includes a display component that is configured to operate at a first refresh rate or a second refresh rate. The device also includes one or more processors operable to perform operations. The operations include identifying a rate change triggering event while the display component is operating at the first refresh rate. The operations further include determining a current brightness value of the display component. The operations also include determining, based on an environmental state measurement associated with an environment around the device, a threshold brightness value. The operations additionally include transitioning the display component from the first refresh rate to the second refresh rate m response to identifying the rate change triggering event if the current brightness value of the display component meets or exceeds the threshold brightness value.
    Type: Grant
    Filed: November 29, 2023
    Date of Patent: April 15, 2025
    Assignee: Google LLC
    Inventors: Chien-Hui Wen, Yichi Chen, Hsin-Yu Chen
  • Publication number: 20250113794
    Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to enhance production yield and fruit quality of cucumber by selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and, at early growth stage, applied to the soil around and/or leaf surface of the cucumber plants. Optionally, the KHP solution can be diluted by water, as disclosed in the specification, before administering as taught herein.
    Type: Application
    Filed: January 3, 2024
    Publication date: April 10, 2025
    Applicant: CH Biotech R&D Co., Ltd.
    Inventors: Kai XIA, Hsin-Yu CHEN, Jie-Chao YOU, Nai-Hua YE
  • Patent number: 12271006
    Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
    Type: Grant
    Filed: August 8, 2023
    Date of Patent: April 8, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
  • Publication number: 20250087126
    Abstract: An example method includes measuring, from a device having a display panel, a plurality of luminance values for a plurality of pixels located along a cross-section of the display panel. The method includes selecting, based on the measured luminance values, a target luminance value. The method includes determining a luminance compensation profile for the input gray level at the given refresh rate. The luminance compensation profile comprises ratios of the measured plurality of luminance values to the target luminance value. The method includes storing, at the device, the luminance compensation profile. Subsequent to the storing, the device is configured to adjust input display data using the luminance compensation profile for an input gray level when the display panel is providing a display. The luminance compensation profile maintains a color uniformity of the display.
    Type: Application
    Filed: December 22, 2021
    Publication date: March 13, 2025
    Inventors: Chien-Hui Wen, Hsin-Yu Chen
  • Patent number: 12249649
    Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: March 11, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Cheng-Han Wu, Hsin-Yu Chen, Chun-Hao Lin, Shou-Wei Hsieh, Chih-Ming Su, Yi-Ren Chen, Yuan-Ting Chuang
  • Patent number: 12242181
    Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: March 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Hao Lee, Hsi-Cheng Hsu, Jui-Chun Weng, Han-Zong Pan, Hsin-Yu Chen, You-Cheng Jhang
  • Patent number: 12237329
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.
    Type: Grant
    Filed: December 1, 2023
    Date of Patent: February 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hao Lin, Hsin-Yu Chen, Shou-Wei Hsieh
  • Patent number: 12236830
    Abstract: A method for calibrating input display data for multiple display refresh rates comprises measuring (1210) an optical property of a display panel for an input gray level at a first refresh rate, measuring (1220) the optical property for a plurality of candidate gray levels at a second refresh rate, selecting (1230), based on the measured optical properties of the display panel, a corresponding gray level for the input gray level, wherein the corresponding gray level is selected from the plurality of candidate gray levels and storing (1240), at the device, the corresponding gray level for the input gray level, wherein subsequent to the storing, the device is configured to adjust input display data using the corresponding gray level for the input gray level when the display panel is transitioning from the first refresh rate to the second refresh rate.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: February 25, 2025
    Assignee: Google LLC
    Inventors: Chien-Hui Wen, Hsin-Yu Chen
  • Publication number: 20250063776
    Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, and a first electrically conductive structure. The semiconductor substrate has a planar device region and a fin device region. The semiconductor substrate includes a mesa structure disposed in the planar device region and fin-shaped structures disposed in the fin device region. The isolation structure is disposed on the semiconductor substrate and includes a first portion which is disposed on the planar device region and covers a sidewall of the mesa structure, and the isolation structure further includes a second portion which is disposed on the fin device region and located between the fin-shaped structures. The first electrically conductive structure is disposed on the planar device region. The first electrically conductive structure is partly disposed above the mesa structure in a vertical direction and partly disposed above the first portion of the isolation structure in the vertical direction.
    Type: Application
    Filed: September 27, 2023
    Publication date: February 20, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hsin-Yu Chen, Chun-Hao Lin, Yuan-Ting Chuang, Shou-Wei Hsieh
  • Publication number: 20250038093
    Abstract: An embodiment interposer includes a first electrically conducting line structure, an electrically conducting via structure that is electrically connected to the first electrically conducting line structure, and a second electrically conducting line structure formed along with the electrically conducting via structure as a monolithic structure. In some embodiments, a portion of the first electrically conducting line structure may be provided within the electrically conducting via structure such that the first electrically conducting line structure is at least partially overlapping with the electrically conducting via structure such that the first electrically conducting line structure and the electrically conducting via structure share a common surface. In other embodiments, the interposer may further include a via land structure electrically connected to the first electrically conducting line structure.
    Type: Application
    Filed: July 27, 2023
    Publication date: January 30, 2025
    Inventors: Monsen Liu, Hsin-Yu Chen, Shuo-Mao Chen, Chia-Hsiang Lin, Shin-Puu Jeng