Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.

Abstract: Methods, systems, and apparatus for quantum machine learning. In one aspect, a method includes obtaining, by a quantum computing device, a training dataset of quantum data points; computing, by the quantum computing device, a kernel matrix that represents a similarity between the quantum data points included in the training dataset, comprising computing a value of a kernel function for each pair of quantum data points in the training dataset, wherein the kernel function is based on reduced density matrices for the quantum data points; and providing, by the quantum computing device, the kernel matrix to a classical processor, wherein the classical processor performs a training algorithm using the kernel matrix to construct a machine learning model.

Abstract: An image sensor is disclosed. The image sensor includes: a pixel circuit in a first die, the pixel circuit including a pixel for sensing an incident light to generate a result; and a correlated double sampling (CDS) readout circuit in a second die different from the first die; wherein the first die is coupled to the second die, and the result sensed by the pixel circuit is read out by the CDS readout circuit. A semiconductor structure is also disclosed. The semiconductor structure includes: said image sensor, wherein the first die is stacked on the second die; and an interconnector between the first die and the second die, the interconnector electrically connecting the pixel circuit and the CDS readout circuit.

Abstract: An image sensor is disclosed. The image sensor includes: a pixel coupled to a floating diffusion region; a reset select transistor coupled between the floating diffusion region and a first supply voltage; an n-type source follower transistor coupled between the first supply voltage and a second supply voltage, the n-type source follower being operable to receive electrical signal from the floating diffusion region; an n-type row select transistor coupled between the first supply voltage and the n-type source follower transistor; a first sample-and-hold capacitor coupled between a third supply voltage and the second supply voltage; a first switch coupled between the n-type row select transistor and the first sample-and-hold capacitor; and a second switch coupled between the third supply voltage and the first sample-and-hold capacitor.

Abstract: An image sensor is disclosed. The image sensor includes: a pixel coupled to a floating diffusion region; a reset select transistor coupled between the floating diffusion region and a first supply voltage; an n-type source follower transistor coupled between the first supply voltage and a second supply voltage, the n-type source follower being operable to receive electrical signal from the floating diffusion region; an n-type row select transistor coupled between the first supply voltage and the n-type source follower transistor; a first sample-and-hold capacitor coupled between a third supply voltage and the second supply voltage; a first switch coupled between the n-type row select transistor and the first sample-and-hold capacitor; and a second switch coupled between the third supply voltage and the first sample-and-hold capacitor.

Abstract: An image sensor is disclosed. The image sensor includes: a pixel circuit in a first die, the pixel circuit including a pixel for sensing an incident light to generate a result; and a correlated double sampling (CDS) readout circuit in a second die different from the first die; wherein the first die is coupled to the second die, and the result sensed by the pixel circuit is read out by the CDS readout circuit. A semiconductor structure is also disclosed. The semiconductor structure includes: said image sensor, wherein the first die is stacked on the second die; and an interconnector between the first die and the second die, the interconnector electrically connecting the pixel circuit and the CDS readout circuit.

Abstract: Systems and methods for machine comprehension are provided. In example embodiments, a machine accesses a context and a question related to the context. The machine determines a low-level meaning of the question and a low-level meaning of the context, the low-level meaning corresponding to words or phrases. The machine determines a high-level meaning of the question and a high-level meaning of the context, the high-level meaning corresponding to sentences or paragraphs. The machine computes, for each position i in the context, a first probability that an answer to the question starts at the position i. The machine computes, for each position j in the context, a second probability that the answer to the question ends at the position j. The machine determines the answer to the question based on the computed first probabilities and the computed second probabilities.

Abstract: A method of manufacturing a cobalt suicide layer in the present invention has a silicon layer formation step. The silicon layer is formed at the interface between the cobalt layer and titanium layer, therefore the interface is smoother in this invention than in other conventional methods, and there are no voids formed at the interface. Moreover, consumption of the silicon can be controlled by adjusting the thickness of the silicon layer.