Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: A semiconductor die includes a substrate, a semiconductor device, a back-end-of-line (BEOL) structure, and a heat dissipation structure. The substrate includes a device region and a non-device region. The BEOL structure includes a plurality of metallization layers. Each of the metallization layers includes a dielectric layer, interconnect features, and metal patterns. The interconnect features is in the dielectric layer and over the device region of the substrate, in which the interconnect features are electrically connected with the semiconductor device. The metal patterns are in the dielectric layer and over the non-device region of the substrate, in which the metal patterns are electrically isolated from the semiconductor device. The heat dissipation structure is over the non-device region of the substrate and extending through at least two of the metallization layers, in which the heat dissipation structure is in contact with the metal patterns of one of the metallization layers.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.