Abstract: One or more semiconductor processing tools may deposit one or more tantalum nitride layers on an upper surface of a copper interconnect and within a via. The one or more semiconductor processing tools may deposit an adhesion layer on an upper surface of the one or more tantalum nitride layers and within the via. The one or more semiconductor processing tools may deposit tungsten on an upper surface of the adhesion layer and within the via for via interconnection of the magnetic tunnel junction to the copper interconnect.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas.

Abstract: Embodiments provide a method and resulting structure that includes forming an opening in a dielectric layer to expose a metal feature, selectively depositing a metal cap on the metal feature, depositing a barrier layer over the metal cap, and depositing a conductive fill on the barrier layer.

Abstract: An improved switching power converting apparatus (10) includes a power converting circuit (102), a sampling circuit (104), a signal gain adjustment circuit (106), a frequency limiting circuit (108) and a pulse width modulation controller (110). The sampling circuit (104) is configured to detect the power converting circuit (102) to obtain a sampled signal (Vs) and transmit the sampled signal (Vs) to the signal gain adjustment circuit (106). The signal gain adjustment circuit (106) is configured to adjust the sampled signal (Vs) to obtain a control signal (Vcon) and transmit the control signal (Vcon) to the frequency limiting circuit (108). The pulse width modulation controller (110) is configured to control an operating frequency of the pulse width modulation controller (110) based on the control signal (Vcon).

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: The present invention relates to a cyber security method, which includes: in a first device: randomly generating an ephemeral decryption key (EDK) in response to an input of an authentication information (AI); transmitting the EDK to a third device and retrieving a token index (TI) from the third device; encrypting an ID info to generate an electronic digital signature (EDS) based on a part of the EDK to generate an authentication token (AT) accordingly; and combining the AI, the ID info, the TI and the AT to form an ephemeral string and sending the ephemeral string to a second device; and in the second device: acquiring the AI, the ID info, the TI and the AT by parsing the ephemeral string and requesting to retrieve the EDK from the third device based on the TI; and decrypting the AT and verifying the EDS based on the EDK.

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

Abstract: A semiconductor component including a semiconductor layer, a barrier layer, a leakage current suppression layer, an ohmic contact layer and an electrode layer is provided. The semiconductor layer has a protrusion and a top surface, adjacent to the protrusion. The protrusion includes a top surface and a side surface. The barrier layer is disposed on the top surface of the protrusion. The leakage current suppression layer is disposed on the top surface of the semiconductor layer. The ohmic contact layer is disposed on the leakage current suppression layer, and contacts the side surface of the protrusion and a side surface of the barrier layer. The ohmic contact layer does not contact the top surface of the semiconductor layer. The electrode layer is disposed on the ohmic contact layer.

Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.

Abstract: The invention relates to a cell sheet construct for neurovascular reconstruction. The cell sheet construct has a vascular endothelial cell layer and a neural stem cell layer, and the two layers are physically in direct contact with each other, where the vascular endothelial cell layer forms branching vasculatures, and the neural stem cell layer differentiates into neurons. The invention also relates to a method for manufacturing the cell sheet construct, having the following steps: culturing vascular endothelial cells on a substrate to form a vascular endothelial cell layer, seeding neural stem cells on the vascular endothelial cell layer to make the neural stem cells be physically in direct contact with the vascular endothelial cell layer, and culturing the neural stem cells and the vascular endothelial cell layer to differentiate into neurons and branching vasculatures to form a cell sheet construct.

Abstract: A molding method of a support rod that first passing a plurality of long fibers through a resin bath for impregnating with resin, then passing the plurality of long fibers impregnated with resin through a bundling hole of a position-constrained vertical plate on a machine to preliminarily form a bundle end; providing a coating layer on the machine, one end of the coating layer obliquely passes through a guiding portion on the position-constrained vertical plate to downwardly contact the bundle end; then placing the one end of the coating layer and the bundle end into a mold cavity of a mold at the same time to form a long rod body; and then cutting the long rod body into multi-segment support rods through a cutting process.

Abstract: A controller of a buck-boost conversion circuit and a mode switching method thereof are provided. The controller control operations of multiple switches of the buck-boost conversion circuit to convert an input voltage into an output voltage and provide an output current. The controller includes a slope compensation circuit, a control loop, and a mode switching circuit. The slope compensation circuit generates a slope compensation signal according to a mode switching signal of a current cycle. The control loop is coupled to the slope compensation circuit and the switches respectively, and is configured to generate multiple switch control signals according to the slope compensation signal, a feedback voltage related to the output voltage, and a current sense signal related to the output current to control the operations of the switches respectively. The mode switching circuit is coupled to the slope compensation circuit and the control loop.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, an inductor, and a dielectric substrate. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled through the inductor to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are all disposed on the dielectric substrate.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.

Abstract: A three-dimensional printing apparatus includes a liquid tank capable of accommodating a photosensitive liquid. The liquid tank includes a film, a plurality of side walls, a plate and a motor. The film has a workpiece curing area. The plurality of side walls surrounds the film. The plate is capable of supporting the film and having at least one fluid tunnel extending from a first surface of the plate contacting the film to a second surface of the plate. The motor is connected to the liquid tank to incline the liquid tank. A gap is formed between the plat and one of the plurality of side walls of the liquid tank, and the film is communicated with an outside space via the gap.

Abstract: A mobile device includes a system circuit board, a metal frame, one or more other antenna elements, a display device, a first feeding element, and an RF (Radio Frequency) module. The system circuit board includes a system ground plane. The metal frame at least includes a first portion and a second portion. The metal frame at least has a first cut point positioned between the first portion and the second portion. The metal frame further has a second cut point for separating the other antenna elements from the first portion. The first cut point is arranged to be close to a middle region of the display device. The first feeding element is directly or indirectly electrically connected to the first portion. A first antenna structure is formed by the first feeding element and the first portion.