Abstract: The present application discloses a light-emitting element comprising a semiconductor light-emitting stack emitting a first light which has a first color coordinate, a first wavelength conversion material on the semiconductor light-emitting stack converting the first light to emit a second light, and a second wavelength conversion material on the first wavelength conversion material converting the second light to emit a third light. The first light and the second light are mixed to be a fourth light having a second color coordinate. The third light and the fourth light are mixed to be a fifth light having a third color coordinate, and the second color coordinate locates at the top right of the first color coordinate and the third color coordinate locates at the top right of the second color coordinate.

Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Abstract: An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

Abstract: The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof. The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.

Abstract: The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.