Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: The present disclosure, in some embodiments, relates an integrated chip. The integrated chip includes a substrate. A through-substrate-via (TSV) extends through the substrate. A dielectric liner separates the TSV from the substrate. The dielectric liner is along one or more sidewalls of the substrate. The TSV includes a horizontally extending surface and a protrusion extending outward from the horizontally extending surface. The TSV has a maximum width along the horizontally extending surface.

Abstract: A semiconductor device includes a substrate, a body structure and an electronic component. The body structure is disposed above the substrate and includes a semiconductor die, a molding compound, a conductive component and a lower redistribution layer (RDL). The semiconductor die has an active surface. The molding compound encapsulates the semiconductor die and has a lower surface, an upper surface opposite to the lower surface and a through hole extending to the upper surface from the lower surface. The conductive component is formed within the through hole. The lower RDL is formed on the lower surface of the molding compound, the active surface of the semiconductor die and the conductive component exposed from the lower surface. The electronic component is disposed above the upper surface of the molding compound and electrically connected to the lower RDL through the conductive component.

Abstract: A semiconductor package structure includes a first redistribution layer, a semiconductor die, a thermal spreader, and a molding material. The semiconductor die is disposed over the first redistribution layer. The thermal spreader is disposed over the semiconductor die. The molding material surrounds the semiconductor die and the thermal spreader.

Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die and a memory die are mounted on a top surface of the bottom substrate in a side-by-side fashion. The logic die may have a thickness not less than 125 micrometers. A connection structure is disposed between the bottom substrate and the top substrate around the logic die and the memory die to electrically connect the bottom substrate with the top substrate. A sealing resin fills in the gap between the bottom substrate and the top substrate and sealing the logic die, the memory die, and the connection structure in the gap.

Abstract: A semiconductor package structure having a frontside redistribution layer, a stacking structure disposed over the frontside redistribution layer and having a first semiconductor die and a second semiconductor die over the first semiconductor die. A backside redistribution layer is disposed over the stacking structure, a first intellectual property (IP) core is disposed in the stacking structure and electrically coupled to the frontside redistribution layer through a first routing channel. A second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is different from the first routing channel and electrically insulated from the frontside redistribution layer.

Abstract: An interconnect structure for a redistribution layer includes an intermediate via land pad; a cluster of upper conductive vias abutting the intermediate via land pad and electrically coupling the intermediate via land pad to an upper via land pad; and an array of lower conductive vias electrically coupling the intermediate via land pad with a lower circuit pad. The array of lower conductive vias is arranged within a horseshoe-shaped via array region extending along a perimeter of the intermediate via land pad. The array of lower conductive vias arranged within the horseshoe-shaped via array region does not overlap with the cluster of upper conductive vias.

Abstract: A package-on-package includes a first package and a second package on the first package. The first package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die and an IC device are mounted on the bottom substrate in a side-by-side configuration. The logic die has a thickness not less than 125 micrometer. Copper cored solder balls are disposed between around the logic die and the IC device to electrically connect the bottom substrate with the top substrate. A sealing resin is filled into the gap between the bottom substrate and the top substrate and seals the logic die, the IC device, and the copper cored solder balls in the gap.

Abstract: One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.

Abstract: A semiconductor package structure includes a frontside redistribution layer, a stacking structure, a backside redistribution layer, a first intellectual property (IP) core, and a second IP core. The stacking structure is disposed over the frontside redistribution layer and comprises a first semiconductor die and a second semiconductor die over the first semiconductor die. The backside redistribution layer is disposed over the stacking structure. The first IP core is disposed in the stacking structure and is electrically coupled to the frontside redistribution layer through a first routing channel. The second IP core is disposed in the stacking structure and is electrically coupled to the backside redistribution layer through a second routing channel, wherein the second routing channel is separated from the first routing channel and electrically insulated from the frontside redistribution layer.

Abstract: A semiconductor package including a base comprising an upper surface and a lower surface that is opposite to the upper surface; a radio-frequency (RF) module embedded near the upper surface of the base; an integrated circuit (IC) die mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation; a plurality of conductive structures disposed on the lower surface of the base and arranged around the IC die; and a metal thermal interface layer comprising a backside metal layer that is in contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.

Abstract: A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: A semiconductor package includes a bottom chip package having a first side and a second side opposing the first side. The bottom chip package comprises a first semiconductor chip and a second semiconductor chip arranged in a side-by-side manner on the second side. A top antenna package is mounted on the first side of the bottom chip package. The top antenna package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor die, and a first capacitor. The substrate has a wiring structure. The redistribution layer is disposed over the substrate. The first semiconductor die is disposed over the redistribution layer. The first capacitor is disposed in the substrate and is electrically coupled to the first semiconductor die. The first capacitor includes a first capacitor substrate, a plurality of first capacitor cells, and a first through via. The first capacitor substrate has a first top surface and a first bottom surface. The first capacitor cells are disposed in the first capacitor substrate. The first through via is disposed in the first capacitor substrate and electrically couples the first capacitor cells to the wiring structure on the first top surface and the first bottom surface.

Abstract: A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Abstract: A semiconductor package structure includes a frontside redistribution layer, a first semiconductor die, a first capacitor, a conductive terminal, and a backside redistribution layer. The first semiconductor die is disposed over the frontside redistribution layer. The first capacitor is disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die. The conductive terminal is disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer. The backside redistribution layer is disposed over the first semiconductor die.

Abstract: A semiconductor package structure includes a first redistribution layer, a semiconductor die, a thermal spreader, and a molding material. The semiconductor die is disposed over the first redistribution layer. The thermal spreader is disposed over the semiconductor die. The molding material surrounds the semiconductor die and the thermal spreader.