Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: The present disclosure provides transposon-based systems for introducing cellular therapeutic products, such as CAR and TCR, into a target immune cell. The transposon-based systems can carry larger payloads than conventional viral vector-based technologies, simplifying multi-genetic editing and can reduce undesired recombination between homologous sequences in the payload. Also provided is a shortened autologous process that can be completed within a few days, within one day or even within a few hours. Even without immune cell activation, enrichment or expansion, the resulting cell populations achieve greatly higher in vivo therapeutic efficacy than the much lengthier autologous process that employs viral vectors.

Abstract: Provided herein are compositions and methods for manufacturing engineered lymphocytes. Also provided are the prepared engineered lymphocytes which have increased proportions of juvenile/naive lymphocytes leading to increased therapeutic efficacy. The methods in various embodiments are expedited as compared to the conventional technology, and produce lymphocytes with improved viability, transduction success rates, and in vivo antitumor efficacy.

Abstract: A system and method for manufacturing engineered human lymphocytes for cell therapies, including isolating targeted cells of interest from apheresis starting material using an acoustic separation device and activating the targeted cells of interest in situ with, in certain aspects, antibody-coated surface in an enclosed vessel. Also, the method includes transfecting the targeted cells of interest with construct-encoded lentiviral vectors, retroviral vectors, adeno-associated vectors or non-viral vectors in the enclosed vessel. The cells of interest may then be transfected with viral or non-viral genetic material using an electroporation device. Transfected cells may then be expanded to a desired dose using an expansion feeding method. Also, the method may include combining the targeted cells of interest with cryoprotectant reagents and buffers to create a final formulation.

Abstract: A method for fabricating a DRAM capacitor is described. First, a semiconductor substrate having a capacitor contact is provided. Next, a first polysilicon layer is formed. Then, an oxide layer and a silicon oxy-nitride layer are sequentially formed over the first polysilicon layer. Next, the silicon oxy-nitride layer, the oxide layer, and the first polysilicon layer are selectively etched to leave a rectangular stack layer. Afterwards, the oxide layer and the first polysilicon layer of the rectangular stack layer are etched from the sidewall direction to leave a double T-shaped stack layer. Then, second polysilicon layer is formed on the upper surface and the sidewall of the double T-shaped stack layer. Next, the second polysilicon layer is selectively removed. The remaining second and first polysilicon layer are used as the bottom electrode. Afterwards, a dielectric layer and an upper electrode are formed on the bottom electrode.

Abstract: A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.