Patents by Inventor Hsing-Chun CHEN

Hsing-Chun CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11973021
    Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: April 30, 2024
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Kai-Chun Chen, Shih-Ming Tseng, Hsing-Chao Liu, Hsiao-Ying Yang
  • Publication number: 20240088224
    Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: HSING-I TSAI, FU-HUAN TSAI, CHIA-CHUNG CHEN, HSIAO-CHUN LEE, CHI-FENG HUANG, CHO-YING LU, VICTOR CHIANG LIANG
  • Publication number: 20220204661
    Abstract: The present application relates to a polypropylene with high melt flow index and a method for producing the same, and meltblown fiber fabrics. A reacting mixture is firstly provided, and a polymerization process is performed to the reacting mixture in a slurry reaction system to obtain the polypropylene. The reacting mixture includes propylene monomers, Ziegler-Natta catalysts, organoaluminum compounds and electron donor. The polypropylene has high melt flow index and adjustable melting point and molecular weight distribution, such that it is used to produce the meltblown fiber fabrics.
    Type: Application
    Filed: October 18, 2021
    Publication date: June 30, 2022
    Inventors: Kwang-Ming CHEN, Kun-Pei HSIEH, Jung-Hung KAO, Chao-Shun CHANG, Hsing-Chun CHEN