Patents by Inventor Hsing-Fei CHOU

Hsing-Fei CHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming semiconductor structures
    Patent number: 8466070
    Abstract: A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: June 18, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsing-Fei Chou, Chia-Hua Chu, Jieh-Jang Chen, Feng-Jia Shiu, Hung Chang Hsieh
  • METHODS OF FORMING SEMICONDUCTOR STRUCTURES
    Publication number: 20120309197
    Abstract: A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed.
    Type: Application
    Filed: June 2, 2011
    Publication date: December 6, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsing-Fei CHOU, Chia-Hua CHU, Jieh-Jang CHEN, Feng-Jia SHIU, Hung Chang HSIEH