Patents by Inventor Hsing-Fu Lu

Hsing-Fu Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming passivation layer
    Patent number: 7727878
    Abstract: A method for forming a passivation layer is disclosed. In the method, a substrate containing a top surface and a bottom surface opposite to the top surface is first provided, wherein a plurality of conductive pads are disposed on the top surface thereof. Thereafter, a first passivation layer is formed on the top surface of the substrate, wherein the first passivation layer has a characteristic of photoresist. A first exposure/develop step is then performed to form a plurality of first openings in the first passivation layer, wherein the conductive pads are exposed through the first openings. Then, a second passivation layer is formed on the first passivation layer, wherein the second passivation layer has a characteristic of photoresist. A second exposure/develop step is then performed to form a plurality of second openings in the second passivation layer, wherein the conductive pads are exposed through the second openings.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: June 1, 2010
    Assignee: Advanced Semiconductor Engineering Inc.
    Inventors: Cheng-Hsueh Su, Hsing-Fu Lu, Tsung-Chieh Ho, Shyh-Ing Wu
  • Method for Forming Passivation Layer
    Publication number: 20070232052
    Abstract: A method for forming a passivation layer is disclosed. In the method, a substrate containing a top surface and a bottom surface opposite to the top surface is first provided, wherein a plurality of conductive pads are disposed on the top surface thereof. Thereafter, a first passivation layer is formed on the top surface of the substrate, wherein the first passivation layer has a characteristic of photoresist. A first exposure/develop step is then performed to form a plurality of first openings in the first passivation layer, wherein the conductive pads are exposed through the first openings. Then, a second passivation layer is formed on the first passivation layer, wherein the second passivation layer has a characteristic of photoresist. A second exposure/develop step is then performed to form a plurality of second openings in the second passivation layer, wherein the conductive pads are exposed through the second openings.
    Type: Application
    Filed: December 28, 2006
    Publication date: October 4, 2007
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: Cheng-Hsueh Su, Hsing-Fu Lu, Tsung-Chieh Ho, Shyh-Ing Wu