Patents by Inventor Hsing H. Chen

Hsing H. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6221269
    Abstract: A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.
    Type: Grant
    Filed: January 19, 1999
    Date of Patent: April 24, 2001
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Umar M. Ahmad, Hsing H. Chen, Lawrence D. David, Charles H. Perry, Donald R. Wall
  • Patent number: 5518131
    Abstract: A molybdenum etching process which reduces hazardous treatment waste is disclosed. Etchants which can be used are ferric sulfate and ferric ammonium sulfate. Waste products resulting from this etch are Fe(OH).sub.3 and CaSO.sub.4.
    Type: Grant
    Filed: July 7, 1994
    Date of Patent: May 21, 1996
    Assignee: International Business Machines Corporation
    Inventors: Hsing H. Chen, Lawrence D. David, Derek B. Harris