Abstract: A solar cell includes a semiconductor substrate, a boron back surface field (BSF) layer, a passivation layer, a back electrode layer and an aluminum local BSF layer. The semiconductor substrate has a front surface and a back surface opposite to each other. The boron BSF layer is disposed in the semiconductor substrate beneath the back surface. The passivation layer is disposed over the boron BSF layer and has an opening through the passivation layer. The back electrode layer is disposed in the opening. The aluminum local BSF layer is disposed in the semiconductor substrate beneath the opening and in contact with the boron BSF layer and the back electrode layer.

Abstract: A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

Abstract: A gas supply apparatus for introducing gases to a process chamber of a PECVD system is provided. The gas supply apparatus includes a gas inlet tube, a process gas pipe, a cleaning gas pipe, a remote plasma source (RPS) and a variable valve. The RPS is connected with a cleaning gas source, and the cleaning gas pipe is connected between the gas inlet tube and the RPS for introducing a cleaning gas from the RPS to the gas inlet tube. The process gas pipe is connected between the gas inlet tube and a process gas source for introducing a process gas to the gas inlet tube. The variable valve is installed in the gas inlet tube for closing a passage between the cleaning gas pipe and the gas inlet tube to prevent the process gas entering the cleaning gas pipe when the process gas is introduced to the process chamber.

Abstract: A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

Abstract: A solar cell and a method for fabricating the same are provided. The solar cell includes a first electrode, a second electrode, a photoelectric conversion layer and a non-conductive reflector. The first electrode including a nano-metal transparent conductive layer is disposed on a transparent substrate. The nano-metal transparent conductive layer substantially contacts with the photoelectric conversion layer. The second electrode is disposed between the photoelectric conversion layer and the transparent substrate. The photoelectric conversion layer is disposed between the first and the second electrodes. The non-conductive reflector is disposed on the first electrode.

Abstract: A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

Abstract: A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

Abstract: A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

Abstract: A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.