Patents by Inventor Hsing-I Huang

Hsing-I Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL ELECTRODE OF CERAMIC CAPACITOR AND METHOD OF FORMING THE SAME
    Publication number: 20240170211
    Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.
    Type: Application
    Filed: February 24, 2023
    Publication date: May 23, 2024
    Inventors: Hsing-I HSIANG, Fu-Su YEN, Chi-Yuen HUANG, Chun-Te LEE, Kai-Hsun YANG, Shih-Ming WANG
  • SEMICONDUCTOR STRUCTURE
    Publication number: 20240088224
    Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: HSING-I TSAI, FU-HUAN TSAI, CHIA-CHUNG CHEN, HSIAO-CHUN LEE, CHI-FENG HUANG, CHO-YING LU, VICTOR CHIANG LIANG
  • Placental stem cell and methods thereof
    Patent number: 7534606
    Abstract: The present invention describes stem cells obtained from post-partum placenta and their methods of obtaining and culturing. The present invention also describes compositions comprising placental stem cells and methods of using placental stem cells.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: May 19, 2009
    Assignee: National Health Research Institutes
    Inventors: Yao-Chang Chen, Lin-Ju Yen, Chih-Cheng Chien, Hsing-I Huang
  • Placental stem cell and methods thereof
    Publication number: 20060030039
    Abstract: The present invention describes stem cells obtained from post-partum placenta and their methods of obtaining and culturing. The present invention also describes compositions comprising placental stem cells and methods of using placental stem cells.
    Type: Application
    Filed: August 11, 2005
    Publication date: February 9, 2006
    Inventors: Yao-Chang Chen, Lin-Ju Yen, Chih-Cheng Chien, Hsing-I Huang
  • Placental stem cell and methods thereof
    Publication number: 20050176139
    Abstract: The present invention describes stem cells obtained from post-partum placenta and their methods of obtaining and culturing. The present invention also describes compositions comprising placental stem cells and methods of using placental stem cells.
    Type: Application
    Filed: January 11, 2005
    Publication date: August 11, 2005
    Inventors: Yao-Chang Chen, Lin-Ju Yen, Chih-Cheng Chien, Hsing-I Huang