Abstract: A package includes an interposer structure including a first via; a first interconnect device including conductive routing and which is free of active devices; an encapsulant surrounding the first via and the first interconnect device; and a first interconnect structure over the encapsulant and connected to the first via and the first interconnect device; a first semiconductor die bonded to the first interconnect structure and electrically connected to the first interconnect device; and a first photonic package bonded to the first interconnect structure and electrically connected to the first semiconductor die through the first interconnect device, wherein the first photonic package includes a photonic routing structure including a waveguide on a substrate; a second interconnect structure over the photonic routing structure, the second interconnect structure including conductive features and dielectric layers; and an electronic die bonded to and electrically connected to the second interconnect structure.

Abstract: A photonic semiconductor device including a light-emitting component and a photonic integrated circuit is provided. The light-emitting component at least includes a gain medium layer, a first contact layer and a first optical coupling layer stacked to each other. The photonic integrated circuit includes a second optical coupling layer. The light-emitting component and the photonic integrated circuit are stacked in a stacking direction, the first optical coupling layer has a first taper portion, the second optical coupling layer has a second taper portion, and the first taper portion and the second taper portion overlap in the stacking direction. Accordingly, the light emitted from the gain medium layer may be transmitted to the second taper portion from the first taper portion by optical coupling in a short length of an optical coupling path.

Abstract: A semiconductor package including a first interposer comprising a first substrate, first optical components over the first substrate, a first dielectric layer over the first optical components, and first conductive connectors embedded in the first dielectric layer, a photonic package bonded to a first side of the first interposer, where a first bond between the first interposer and the photonic package includes a dielectric-to-dielectric bond between a second dielectric layer on the photonic package and the first dielectric layer, and a second bond between the first interposer and the photonic package includes a metal-to-metal bond between a second conductive connector on the photonic package and a first one of the first conductive connectors and a first die bonded to the first side of the first interposer.

Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Abstract: Optical devices and methods of manufacture are presented in which a laser die or other heterogeneous device is embedded within an optical device and evanescently coupled to other devices. The evanescent coupling can be performed either from the laser die to a waveguide, to an external cavity, to an external coupler, or to an interposer substrate.

Abstract: Optical devices and methods of manufacture are presented in which an opening is formed within a first semiconductor device and then bonded to other optical devices. A laser die or other fill material may be used to refill the opening. The first semiconductor device is then electrically connected to an optical interposer.

Abstract: A method includes forming an optical engine, which includes a photonic die. The photonic die further includes a grating coupler. The method further includes forming a fiber unit including a fiber platform having a groove, and an optical fiber attached to the fiber platform. The optical fiber extends into the groove. The fiber platform further includes a reflector. The fiber unit is attached to the optical engine, and the reflector is configured to deflect a light beam, so that the light beam emitted by a first one of the optical fiber and the grating coupler is received by a second one of the optical fiber and the grating coupler.

Abstract: A method includes patterning a top silicon layer in a substrate to form a plurality of photonic devices. The substrate includes the top silicon layer, a first dielectric layer under the top silicon layer, and a semiconductor layer under the first dielectric layer. The method further includes forming a second dielectric layer to embed the plurality of photonic devices therein, forming an interconnect structure over and signally coupling to the plurality of photonic devices, bonding an electronic die to the interconnect structure, thinning the semiconductor layer, and patterning the semiconductor layer that has been thinned to form openings. The openings are filled with a dielectric material to form dielectric regions. Through-vias are formed to penetrate through the dielectric regions to electrically couple to the interconnect structure.

Abstract: A method includes encapsulating a first device die and a second device die in an encapsulant, and forming an interconnect structure over and electrically connecting to the first device die and the second device die. A waveguide is formed in the interconnect structure. An optical-engine based interconnect component is bonded to the interconnect structure. The optical-engine based interconnect component forms a part of a signal path that connects the first device die to the second device die.

Abstract: A method includes receiving a workpiece that includes a substrate, a first dielectric layer over the substrate, and an optical layer over the dielectric layer; patterning the optical layer to form a first waveguide and a grating coupler; forming a first opening in the substrate that exposes the first dielectric layer, wherein at least a portion of the first opening is directly over the grating coupler; depositing a metal layer in the first opening; and depositing a second dielectric layer over the metal layer.

Abstract: A semiconductor structure includes an optical interposer having at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer. The semiconductor structure further includes a first die disposed on the optical interposer and electrically connected to the optical interposer; a first substrate under the optical interposer; and conductive connectors under the first substrate.

Abstract: A package includes a laser diode includes a bonding layer; a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode; a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode; a second dielectric layer over the first silicon nitride waveguide; a silicon waveguide in the second dielectric layer; an interconnect structure over the silicon waveguide; and conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device including a dielectric structure disposed on a first substrate. An edge coupler is disposed within the dielectric structure and comprises a plurality of optical core segments. A deflector structure is disposed within the dielectric structure and is laterally adjacent to the edge coupler. The deflector structure is configured to redirect an optical signal traveling along a first direction to a second direction towards the edge coupler.

Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a dielectric layer, a first waveguide structure, a second waveguide structure, a semiconductive layer, and a micro-lens. The first waveguide structure is disposed in the dielectric layer and extends along a first direction. The second waveguide structure is disposed in the dielectric layer and includes an inclined surface configured to redirect an optical signal from a second direction to the first direction. The semiconductive layer is disposed over the dielectric layer. The micro-lens is disposed at the semiconductive layer, wherein an optical signal travels into the semiconductive layer through the micro-lens along the second direction. A method of manufacturing the semiconductor structure is also provided.

Abstract: A method includes forming a first photonic package, wherein forming the first photonic package includes patterning a silicon layer to form a first waveguide, wherein the silicon layer is on an oxide layer, and wherein the oxide layer is on a substrate; forming vias extending into the substrate; forming a first redistribution structure over the first waveguide and the vias, wherein the first redistribution structure is electrically connected to the vias; connecting a first semiconductor device to the first redistribution structure; removing a first portion of the substrate to form a first recess, wherein the first recess exposes the oxide layer; and filling the first recess with a first dielectric material to form a first dielectric region.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are described herein. A method includes providing a first material layer between a second material layer and a semiconductor substrate and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The methods also include electrically coupling an electronic die to the photonic die. Some methods include packaging the semiconductor device in a packaged assembly.

Abstract: A method includes bonding a photonic engine onto an interposer, and bonding a package component onto the interposer. The package component includes a device die. The method further includes encapsulating the package component and the photonic engine in an encapsulant, attaching a thermal-electronic cooler to the photonic engine, and attaching a metal lid to the package component.

Abstract: A method includes forming multiple photonic devices in a semiconductor wafer, forming a v-shaped groove in a first side of the semiconductor wafer, forming an opening extending through the semiconductor wafer, forming multiple conductive features within the opening, wherein the conductive features extend from the first side of the semiconductor wafer to a second side of the semiconductor wafer, forming a polymer material over the v-shaped groove, depositing a molding material within the opening, wherein the multiple conductive features are separated by the molding material, after depositing the molding material, removing the polymer material to expose the v-shaped groove, and placing an optical fiber within the v-shaped groove.

Abstract: A semiconductor package includes an interconnect structure, an insulating layer and a conductive layer. The interconnect structure includes a first surface and a second surface opposite to the first surface. The insulating layer contacts the interconnect structure. The insulating layer includes a third surface contacting the second surface of the interconnect structure and a fourth surface opposite to the third surface. The conductive layer is electrically coupled to the interconnect structure. The conductive layer has a continuous portion extending from the second surface to the fourth surface.