Patents by Inventor Hsing-Lin YANG

Hsing-Lin YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stretchable layout design for EUV defect mitigation
    Patent number: 10877370
    Abstract: A method for mitigating extreme ultraviolet (EUV) mask defects is disclosed. The method includes the steps of providing a wafer blank, identifying a first plurality of defects on the wafer blank, providing an EUV mask design on top of the wafer blank, identifying non-critical blocks with corresponding stretchable zones on the EUV mask design, overlapping the EUV blank with the EUV mask design, identifying a second plurality of defects, the second plurality of defects are solved, identifying a third plurality of defects, the third plurality of defects are not solved, adjusting the relative locations of the EUV mask design and the EUV blank to solve at least one of the third plurality of defects, and adjusting the locations of at least one of the non-critical blocks within corresponding stretchable zones to solve at least one of the third plurality of defects.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsing-Lin Yang, Chin-Chang Hsu, Yen-Hung Lin, Chung-Hsing Wang, Wen-Ju Yang
  • STRETCHABLE LAYOUT DESIGN FOR EUV DEFECT MITIGATION
    Publication number: 20190033707
    Abstract: A method for mitigating extreme ultraviolet (EUV) mask defects is disclosed. The method includes the steps of providing a wafer blank, identifying a first plurality of defects on the wafer blank, providing an EUV mask design on top of the wafer blank, identifying non-critical blocks with corresponding stretchable zones on the EUV mask design, overlapping the EUV blank with the EUV mask design, identifying a second plurality of defects, the second plurality of defects are solved, identifying a third plurality of defects, the third plurality of defects are not solved, adjusting the relative locations of the EUV mask design and the EUV blank to solve at least one of the third plurality of defects, and adjusting the locations of at least one of the non-critical blocks within corresponding stretchable zones to solve at least one of the third plurality of defects.
    Type: Application
    Filed: January 29, 2018
    Publication date: January 31, 2019
    Inventors: Hsing-Lin YANG, Chin-Chang HSU, Yen-Hung LIN, Chung-Hsing WANG, Wen-Ju YANG