Patents by Inventor Hsing-Lung Chen

Hsing-Lung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9324761
    Abstract: A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: April 26, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hao Shih, Szu-Ying Chen, Hsing-Lung Chen, Jen-Cheng Liu, Dun-Nian Yaung, Volume Chien
  • Publication number: 20150132884
    Abstract: A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.
    Type: Application
    Filed: January 22, 2015
    Publication date: May 14, 2015
    Inventors: Yu-Hao SHIH, Szu-Ying CHEN, Hsing-Lung CHEN, Jen-Cheng LIU, Dun-Nian YAUNG, Volume CHIEN
  • Patent number: 8962375
    Abstract: A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: February 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hao Shih, Szu-Ying Chen, Hsing-Lung Chen, Jen-Cheng Liu, Dun-Nian Yaung, Volume Chien
  • Patent number: 8710857
    Abstract: A high frequency vertical spring probe is provided in the present invention. The probe includes an unclosed ring structure having a gap disposed therein to provide an elastic property for vertical deformation. At least a first contacting component and a second contacting component are disposed on the ring structure of the probe to provide electrical connection of an external component when the probe is compressed. The first contacting component is located near two terminals of the ring structure adjacent to the gap and the second contacting component is disposed vertically corresponding to the first contacting component. The probe can serve as the electrical connection between two components or can be installed in the probe card to provide chip testing with high-frequency, high-speed and good-contacting environment.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: April 29, 2014
    Assignee: Probeleader Co., Ltd.
    Inventors: Cheng-Lung Huang, Pou-Huang Chen, Hsing-Lung Chen
  • Publication number: 20140106498
    Abstract: A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.
    Type: Application
    Filed: December 16, 2013
    Publication date: April 17, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTUTING COMPANY, LTD.
    Inventors: Yu-Hao SHIH, Szu-Ying CHEN, Hsing-Lung CHEN, Jen-Cheng LIU, Dun-Nian YAUNG, Volume CHIEN
  • Patent number: 8629523
    Abstract: The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hao Shih, Szu-Ying Chen, Hsing-Lung Chen, Jen-Cheng Liu, Dun-Nian Yaung, Volume Chien
  • Publication number: 20110254115
    Abstract: The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.
    Type: Application
    Filed: April 16, 2010
    Publication date: October 20, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hao SHIH, Szu-Ying CHEN, Hsing-Lung CHEN, Jen-Cheng LIU, Dun-Nian YAUNG, Volume CHIEN
  • Publication number: 20110241715
    Abstract: A high frequency vertical spring probe is provided in the present invention. The probe includes an unclosed ring structure having a gap disposed therein to provide an elastic property for vertical deformation. At least a first contacting component and a second contacting component are disposed on the ring structure of the probe to provide electrical connection of an external component when the probe is compressed. The first contacting component is located near two terminals of the ring structure adjacent to the gap and the second contacting component is disposed vertically corresponding to the first contacting component. The probe can serve as the electrical connection between two components or can be installed in the probe card to provide chip testing with high-frequency, high-speed and good-contacting environment.
    Type: Application
    Filed: April 1, 2011
    Publication date: October 6, 2011
    Inventors: Cheng-Lung Huang, Pou-Huang Chen, Hsing-Lung Chen
  • Patent number: 6164157
    Abstract: A bicycle crankset includes a chain ring, a sleeve, two bearing sets, two bearings, two fastening nuts, two rubber washers, a retaining washer, a tightening nut, and a crank arm provided with outer threads. The crankset is mounted on the crank arm by the sleeve in conjunction with the retaining washer and the tightening nut which is engaged with the outer threads of the crank arm. The two fastening nuts are provided with a circular groove for retaining the rubber washer which is semicircular in its cross section and is provided at both edges on the flat side with an angled corner to facilitate the inserting of the rubber washer into the circular groove of the fastening nuts.
    Type: Grant
    Filed: July 14, 1999
    Date of Patent: December 26, 2000
    Inventor: Hsing-Lung Chen