Patents by Inventor Hsing-Wen LEE

Hsing-Wen LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967601
    Abstract: A bottom-emission light-emitting diode (LED) display includes a transparent substrate, a plurality of LEDs bonded on the substrate, a packaging layer formed on the substrate to cover the LEDs, and a reflecting layer formed on the packaging layer to reflect light emitted by the plurality of LEDs. The reflecting layer has a non-smooth shape or the packaging layer has different refractivities.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: April 23, 2024
    Assignee: Prilit Optronics, Inc.
    Inventors: Biing-Seng Wu, Chao-Wen Wu, Chun-Bin Wen, Chien-Lin Lai, Hsing-Ying Lee
  • Patent number: 11894308
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Grant
    Filed: December 1, 2020
    Date of Patent: February 6, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Sheng-Ming Wang, Tien-Szu Chen, Wen-Chih Shen, Hsing-Wen Lee, Hsiang-Ming Feng
  • Publication number: 20210091006
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Application
    Filed: December 1, 2020
    Publication date: March 25, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming WANG, Tien-Szu CHEN, Wen-Chih SHEN, Hsing-Wen LEE, Hsiang-Ming FENG
  • Patent number: 10854550
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: December 1, 2020
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Sheng-Ming Wang, Tien-Szu Chen, Wen-Chih Shen, Hsing-Wen Lee, Hsiang-Ming Feng
  • Publication number: 20190096814
    Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.
    Type: Application
    Filed: August 22, 2018
    Publication date: March 28, 2019
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Sheng-Ming WANG, Tien-Szu CHEN, Wen-Chih SHEN, Hsing-Wen LEE, Hsiang-Ming FENG