Patents by Inventor Hsing-yi Chen

Hsing-yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-speed cell-sensing unit for a semiconductor memory device
    Patent number: 6009032
    Abstract: A cell-sensing unit is applied to a memory device having a cell associated operably with a complementary pair of bit lines and a word line. The cell-sensing unit includes a current sense amplifier having a first input side adapted to be connected to the bit lines, and a first output side, and a voltage amplifier having a second input side connected to the first output side of the current sense amplifier, and a second output side. The current sense amplifier is capable of magnifying a difference between currents flowing through the bit lines during a read cycle of the cell, and generates a corresponding voltage difference at the first output side. The voltage difference is received by the voltage amplifier at the second input side, and has a magnitude sufficient to enable the voltage amplifier to generate an output signal at the second output side corresponding to data stored in the cell.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: December 28, 1999
    Assignee: Silicon Integrated Systems Corp.
    Inventors: Hsiu-Ping Lin, Hsing-Yi Chen