Abstract: An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

Abstract: An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

Abstract: A method of reducing particulate contamination in a deposition process including providing a semiconductor wafer having a process surface for depositing a deposition layer thereover according to one of a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) process; depositing at least a portion of the deposition layer over the process surface; cleaning the semiconductor wafer including the process surface according to an ex-situ cleaning process to remove particulate contamination including at least one of spraying and scrubbing; and, repeating the steps of depositing and cleaning at least once to include reducing a level of occluded particulates.

Abstract: A method of reducing particulate contamination in a deposition process including providing a semiconductor wafer having a process surface for depositing a deposition layer thereover according to one of a physical vapor deposition (PVD) and a chemical vapor deposition (CVD) process; depositing at least a portion of the deposition layer over the process surface; cleaning the semiconductor wafer including the process surface according to an ex-situ cleaning process to remove particulate contamination including at least one of spraying and scrubbing; and, repeating the steps of depositing and cleaning at least once to include reducing a level of occluded particulates.