Patents by Inventor Hsing-Yuan HUANG

Hsing-Yuan HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11939664
    Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Meng-Chun Hsieh, Tsung-Yu Tsai, Hsing-Yuan Huang, Chih-Chang Wu, Szu-Hua Wu, Chin-Szu Lee
  • Publication number: 20240068043
    Abstract: Provided is a method for diagnosing and monitoring progression of cancer or effectiveness of a therapeutic treatment. The method includes detecting a methylation level of at least one gene in a biological sample containing circulating free DNA. Also provided are primer pairs and probes for diagnosis or prognosis of cancer in a subject in need thereof.
    Type: Application
    Filed: March 1, 2022
    Publication date: February 29, 2024
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Hsing-Chen TSAI, Chong-Jen YU, Hsuan-Hsuan LU, Shu-Yung LIN, Yi-Jhen HUANG, Chen-Yuan DONG
  • Publication number: 20230062902
    Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: Meng-Chun HSIEH, Tsung-Yu TSAI, Hsing-Yuan HUANG, Chih-Chang WU, Szu-Hua WU, Chin-Szu LEE
  • Patent number: 11164937
    Abstract: A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the top surface of the top electrode. The insulator layer is between the bottom electrode and the top electrode. The interconnection layer is over the semiconductor substrate and is electrically connected to the capacitor.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen Ho, Chien Lin, You-Hua Chou, Hsing-Yuan Huang, Cheng-Yu Hung
  • Publication number: 20200235199
    Abstract: A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the top surface of the top electrode. The insulator layer is between the bottom electrode and the top electrode. The interconnection layer is over the semiconductor substrate and is electrically connected to the capacitor.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen HO, Chien LIN, You-Hua CHOU, Hsing-Yuan HUANG, Cheng-Yu HUNG