Patents by Inventor Hsinhan Tsai

Hsinhan Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes
    Patent number: 11681059
    Abstract: A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: June 20, 2023
    Assignee: TRIAD NATIONAL SECURITY, LLC
    Inventors: Hsinhan Tsai, Wanyi Nie
  • High-efficiency and durable optoelectronic devices using layered 2D perovskites
    Patent number: 10770239
    Abstract: A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: September 8, 2020
    Assignee: TRIAD NATIONAL SECURITY, LLC
    Inventors: Aditya Mohite, Hsinhan Tsai, Wanyi Nie, Mercouri Kanatzidis, Konstantinos Stoumpos
  • Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application
    Patent number: 9012770
    Abstract: Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: April 21, 2015
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Mircea Cotlet, Hsing-Lin Wang, Hsinhan Tsai, Zhihua Xu
  • Conductive Polymer/Fullerence Blend Thin Films with Honeycomb Framework for Transparent Photovoltaic Application
    Publication number: 20130014818
    Abstract: Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.
    Type: Application
    Filed: May 25, 2012
    Publication date: January 17, 2013
    Applicant: Brookhaven Science Associates, LLC
    Inventors: Mircea Cotlet, Hsing-Lin Wang, Hsinhan Tsai, Zhihua Xu