Patents by Inventor Hsio-Lei Wang

Hsio-Lei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of buried strap out-diffusion formation by gas phase doping
    Patent number: 6734106
    Abstract: A method of forming a buried strap comprising the following sequential steps. A substrate having a pad oxide layer formed thereover is provided. A masking layer is formed over the pad oxide layer. The masking layer, pad oxide layer and substrate are etched to form a trench within the substrate. The trench having an outer sidewall and an upper portion. The upper portion of the trench is lined with a collar. A poly plate is formed within the trench. The poly plate and collar are etched below the substrate to form a recessed poly plate and a recessed collar and exposing a portion of outer sidewall of trench. Ions are implanted into the substrate through exposed outer sidewall of trench by gas phase doping. A SiN sidewall layer is formed over the exposed outer sidewall of trench at a temperature sufficient to diffuse the implanted ions further into the substrate to form the buried strap.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: May 11, 2004
    Assignee: ProMos Technologies, Inc.
    Inventors: Jesse Chung, Hsio-Lei Wang, Hung-Kwei Liao