Patents by Inventor Hsiu-Fen Lin

Hsiu-Fen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180040915
    Abstract: A sulfur doped oxide solid electrolyte powder is provided. The amount of sulfur is 1 wt % to 5 wt % based on the weight of the sulfur doped oxide solid electrolyte powder. A solid state battery is also provided. The solid state battery includes a positive electrode layer, a negative electrode layer, and an electrolyte layer. The electrolyte layer includes the above sulfur doped oxide solid electrolyte powder.
    Type: Application
    Filed: August 1, 2017
    Publication date: February 8, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Chieh LIAO, Kuan-Yu KO, Hsiu-Fen LIN, Jin-Ming CHEN
  • Publication number: 20170179544
    Abstract: A lithium positive electrode material is provided, which includes a host material and a doping material doped into the host material, wherein the doping material has a chemical formula of LiyLazZrwAluO12+(u*3/2), wherein 5?y?8, 2?z?5, 1?w?3, and 0<u<1. The lithium positive electrode material may collocate with carbon material and binder to form a positive electrode for a lithium battery.
    Type: Application
    Filed: November 9, 2016
    Publication date: June 22, 2017
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsiu-Fen LIN, Shih-Chieh LIAO, Chia-Chin LEE, Chi-Ju CHENG, Jin-Ming CHEN
  • Publication number: 20150188110
    Abstract: A battery with a heat-resistant layer is provided. The battery with a heat-resistant layer includes a positive electrode, a negative electrode, a separator, an electrolyte and a heat-resistant layer. The separator is disposed between the positive electrode and the negative electrode. The heat-resistant layer is disposed between at least one of the positive or negative electrodes and the separator, wherein the heat-resistant layer has a tetrapod-shaped surface morphology. The positive electrode, the negative electrode, the separator and the heat-resistant layer are soaked in the electrolyte. A method for manufacturing the heat-resistant layer is also provided.
    Type: Application
    Filed: December 15, 2014
    Publication date: July 2, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsiu-Fen LIN, Shih-Chieh LIAO, Chia-Ming CHANG, Min-Ling HOU, Yu-Hao HUANG, Chia-Chin LEE
  • Patent number: 8465718
    Abstract: The invention discloses nano/micron binary structured powders for superhydrophobic, self-cleaning applications. The powders are featured by micron-scale diameter and nano-scale surface roughness. In one embodiment, the average diameter is about 1-25 ?m, and the average roughness Ra is about 3-100 nm. The nano/micron binary structured powders may be made of silica, metal oxide, or combinations thereof.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: June 18, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Chieh Liao, Hsiu-Fen Lin, Jin-Ming Chen
  • Patent number: 7666385
    Abstract: A powdered photocatalyst and manufacturing method thereof are disclosed. The manufacturing method of the photocatalytic nanopowders is achieved by the non-transferred DC plasma apparatus in an atmosphere of nitrogen at around 1 atm. The nitrogen-containing gas is used as the plasma-forming gas. After the generation of the nitrogen-plasma in the non-transferred DC plasma apparatus, a plurality of solid Zn precursors are introduced to the nitrogen-plasma for vaporization and oxidization. The solid Zn precursors are vaporized and oxidized through homogeneous nucleation and are rapidly cooled down by a large amount of cooling gas (i.e. mixture of nitrogen and oxygen). After the cooling process, the tetrapod-shaped and nitrogen-doped photocatalytic ZnO nanopowders having wurtzite structure are formed.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: February 23, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Chieh Liao, Song-Wein Hong, Hsiu-Fen Lin
  • Publication number: 20090025508
    Abstract: The invention discloses nano/micron binary structured powders for superhydrophobic, self-cleaning applications. The powders are featured by micron-scale diameter and nano-scale surface roughness. In one embodiment, the average diameter is about 1-25 ?m, and the average roughness Ra is about 3-100 nm. The nano/micron binary structured powders may be made of silica, metal oxide, or combinations thereof.
    Type: Application
    Filed: October 5, 2007
    Publication date: January 29, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Chieh Liao, Hsiu-Fen Lin, Jin-Ming Chen
  • Patent number: 7125537
    Abstract: A method for manufacturing powders of oxides in a nanometer level through a direct current plasma thermal reaction is disclosed. The energy required is provided by the plasma that is generated in the non-transferred DC plasma apparatus. Once the solid precursors are introduced into the plasma, the solid precursors are vaporized and oxidized in the plasma reaction region of the non-transferred DC plasma apparatus continuously. Then, the oxide powders in a nanometer scale can form homogeneously and continuously. By controlling the nozzle size, the speed of the plasma can be adjusted and the coarsening and agglomeration of the nanopowders can be effectively prevented. Finally, oxide nanopowders of high-purity and high-dispersity are obtained by cooling down the plasma gas containing the vaporized and oxidized precursor through a vortical cooling-gas.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: October 24, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Chieh Liao, Song-Wein Hong, Hsiu-Fen Lin
  • Publication number: 20050249660
    Abstract: A powdered photocatalyst and manufacturing method thereof are disclosed. The manufacturing method of the photocatalytic nanopowders is achieved by the non-transferred DC plasma apparatus in an atmosphere of nitrogen at around 1 atm. The nitrogen-containing gas is used as the plasma-forming gas. After the generation of the nitrogen-plasma in the non-transferred DC plasma apparatus, a plurality of solid Zn precursors are introduced to the nitrogen-plasma for vaporization and oxidization. The solid Zn precursors are vaporized and oxidized through homogeneous nucleation and are rapidly cooled down by a large amount of cooling gas (i.e. mixture of nitrogen and oxygen). After the cooling process, the tetrapod-shaped and nitrogen-doped photocatalytic ZnO nanopowders having wurtzite structure are formed.
    Type: Application
    Filed: December 30, 2004
    Publication date: November 10, 2005
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Chieh Liao, Song-Wein Hong, Hsiu-Fen Lin
  • Publication number: 20050186132
    Abstract: A method for manufacturing powders of oxides in a nanometer level through a direct current plasma thermal reaction is disclosed. The energy required is provided by the plasma that is generated in the non-transferred DC plasma apparatus. Once the solid precursors are introduced into the plasma, the solid precursors are vaporized and oxidized in the plasma reaction region of the non-transferred DC plasma apparatus continuously. Then, the oxide powders in a nanometer scale can form homogeneously and continuously. By controlling the nozzle size, the speed of the plasma can be adjusted and the coarsening and agglomeration of the nanopowders can be effectively prevented. Finally, oxide nanopowders of high-purity and high-dispersity are obtained by cooling down the plasma gas containing the vaporized and oxidized precursor through a vortical cooling-gas.
    Type: Application
    Filed: December 30, 2004
    Publication date: August 25, 2005
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Chieh Liao, Song-Wein Hong, Hsiu-Fen Lin