Abstract: A sensor having a distal end and an intermediate region adjacent to the distal end is provided. The sensor includes an insulator base substrate, sensor electrodes over the insulator base substrate, an electrode lead pattern over the insulator base substrate, wherein the electrode lead pattern includes electrode leads configured for contact with the sensor electrodes, and wherein the electrode leads extend completely across the intermediate region in a longitudinal direction, and a structural backing layer over the electrode lead pattern and insulator base substrate; wherein a side edge of the structural backing layer over the electrode lead pattern extends completely across the structural backing layer in the longitudinal direction.

Abstract: Sensors and methods for manufacturing sensors are provided. An exemplary method for manufacturing a sensor includes forming an electrode lead pattern over an insulator base substrate. Further, the method includes forming a structural backing layer over the electrode lead pattern and insulator base substrate. Also, the method includes performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern.

Abstract: Sensors and methods for manufacturing sensors are provided. An exemplary method for manufacturing a sensor includes forming an electrode lead pattern over an insulator base substrate. Further, the method includes forming a structural backing layer over the electrode lead pattern and insulator base substrate. Also, the method includes performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern.

Abstract: A bonding pad structure formed on a semiconductor substrate comprises an insulating layer, a conducting pad, a passivation layer, and a buffer layer. The insulating layer is formed on the semiconductor substrate. The conducting pad is formed on the insulating layer, and the passivation layer is formed to cover peripherals of the conducting pad forming an overhang region therebetween. However, the buffer layer is patterned and etched to form a plurality of either islands or openings between the insulating layer and the conducting pad but withon the range of the overhang region. Accordingly, peeling resistance ability can be enhanced via a form of mechanical interlocking. In addition, a portion of the overhang region can be wider than the other portion thereof in order to further intensify the adhesion between the conducting pad and the passivation layer.

Abstract: A bonding pad structure in accordance with the present invention is formed on a semiconductor substrate. The bonding pad structure comprises a buffer layer, a planarization layer, a conducting pad, and a passivation layer. The buffer layer is formed over the semiconductor substrate, and the planarization layer is thereafter formed on the buffer layer. The buffer layer is patterned and etched to shape a plurality of contact holes. The conducting pad is formed on the planarization layer and filled in the contact holes in order to mechanically interlock with the planarization layer. The passivation layer overlies peripherals of the conducting pad forming an overhang region therebetween. Moreover, the width of a portion of the overhang region close to a drawing direction may be enlarged so that the adhesion between the conducting pad and the passivation layer can be increased.