Patents by Inventor Hsiu-Hsiung YANG

Hsiu-Hsiung YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor process
    Patent number: 10395997
    Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: August 27, 2019
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yu-Cheng Tsao, Cheng-Hung Wang, Chun-Chieh Lin, Hsiu-Hsiung Yang, Yu-Pin Tsai
  • SEMICONDUCTOR PROCESS
    Publication number: 20170125310
    Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.
    Type: Application
    Filed: January 18, 2017
    Publication date: May 4, 2017
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yu-Cheng TSAO, Cheng-Hung WANG, Chun-Chieh LIN, Hsiu-Hsiung YANG, Yu-Pin TSAI
  • Semiconductor process
    Patent number: 9564376
    Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: February 7, 2017
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Yu-Cheng Tsao, Cheng-Hung Wang, Chun-Chieh Lin, Hsiu-Hsiung Yang, Yu-Pin Tsai
  • SEMICONDUCTOR PROCESS
    Publication number: 20150132867
    Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.
    Type: Application
    Filed: September 23, 2014
    Publication date: May 14, 2015
    Inventors: Yu-Cheng TSAO, Cheng-Hung WANG, Chun-Chieh LIN, Hsiu-Hsiung YANG, Yu-Pin TSAI