Abstract: The present invention discloses a method for simultaneously removing from a silicon surface polymeric films and damaged silicon layers by exposing the surface to a cleaning solution that contains amine or ethanolamine for a length of time that is sufficient to remove all such unwanted materials. The method is effective in cleaning away damaged silicon layers having a thickness between about 20 Å and about 60 Å in a period of time between about 2 minutes and about 20 minutes. In a preferred embodiment, the cleaning solution is a water solution of ethanolamine and gallic acid.

Abstract: A method for removing from a patterned silicon containing dielectric layer a patterned partially fluorinated photoresist layer employed in patterning the patterned silicon containing dielectric layer. There is first formed over a semiconductor substrate a metal contact layer having a silicon containing dielectric layer formed thereover. There is then formed upon the silicon containing dielectric layer a patterned photoresist layer. There is then formed by use of a reactive ion etch (RIE) plasma etch method employing a fluorine containing etchant a via through the silicon containing dielectric layer to form a patterned silicon containing dielectric layer reaching the metal contact layer.