Abstract: The present disclosure provides an over-voltage protection device. The over-voltage protection device includes a substrate, a stack structure disposed over the substrate. The stack structure includes a first insulation structure, a second insulation structure, and a conductive layer. The conductive layer is disposed on the first insulation structure, and the second insulation structure is disposed on the conductive layer. The second insulation structure has an insulation air gap, which has an upper width greater than a lower width.

Abstract: The present disclosure provides an over-voltage protection device. The over-voltage protection device includes a substrate, a stack structure disposed over the substrate. The stack structure includes a first insulation structure, a second insulation structure, and a conductive layer. The conductive layer is disposed on the first insulation structure, and the second insulation structure is disposed on the conductive layer. The second insulation structure has an insulation air gap, which has an upper width greater than a lower width.

Abstract: The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.

Abstract: The present disclosure provides a semiconductor package having a size equal to or larger than standard size 0201. The semiconductor package includes a die and a packing member. The size of the die is smaller than one-half of the standard size 0201, and the packing member encapsulates the die.

Abstract: The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.

Abstract: An over-voltage protection device includes a substrate, an insulation layer having a depression over the substrate, a conductor layer having a first electrode and a second electrode over the insulation layer, wherein the first electrode and the second electrode form a discharge path, and the depression is under the discharge path. A method for preparing the over-voltage protection device includes the steps of forming an insulation layer over a substrate; forming a depression in the insulation layer; forming a photoresist pattern filling the depression and protruding the insulation layer; forming a conductor layer over the insulation layer; and removing the photoresist pattern, wherein the photoresist pattern divides the conductor layer into a first electrode and a second electrode that form a discharge path, and the depression is under the discharge path after the removal of the photoresist pattern.

Abstract: An over-voltage protection device includes a substrate, an insulation layer having a depression over the substrate, a conductor layer having a first electrode and a second electrode over the insulation layer, wherein the first electrode and the second electrode form a discharge path, and the depression is under the discharge path. A method for preparing the over-voltage protection device includes the steps of forming an insulation layer over a substrate; forming a depression in the insulation layer; forming a photoresist pattern filling the depression and protruding the insulation layer; forming a conductor layer over the insulation layer; and removing the photoresist pattern, wherein the photoresist pattern divides the conductor layer into a first electrode and a second electrode that form a discharge path, and the depression is under the discharge path after the removal of the photoresist pattern.