Abstract: A word line driving circuit includes a first circuit and a second circuit. The first circuit is configured to provide a first word line driving voltage and a second word line driving voltage based on a first control signal, a second control signal, a first bias voltage, a second bias voltage and a base voltage. The second circuit is configured to provide the first control signal and the second control signal based on a third control signal, a fourth control signal, a word line control signal, a reverse word line control signal, the first bias voltage, the second bias voltage and the base voltage. The first bias voltage and the second bias voltage have different levels during the read mode and the program mode for adaptively adjusting the read voltage and the program voltage, thereby improving the data access time.

Abstract: A method for processing a semiconductor wafer is provided. The method includes polishing the semiconductor wafer with a chemical mechanical polishing (CMP) tool. The method includes transferring the polished semiconductor wafer to an interface tool from the CMP tool. The method includes discharging a mist spray over the polished semiconductor wafer in the interface tool. The method includes transferring the semiconductor wafer form the interface tool to a cleaning tool for a cleaning process.

Abstract: A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

Abstract: A word line driving circuit includes a first circuit and a second circuit. The first circuit is configured to provide a first word line driving voltage and a second word line driving voltage based on a first control signal, a second control signal, a first bias voltage, a second bias voltage and a base voltage. The second circuit is configured to provide the first control signal and the second control signal based on a third control signal, a fourth control signal, a word line control signal, a reverse word line control signal, the first bias voltage, the second bias voltage and the base voltage. The first bias voltage and the second bias voltage have different levels during the read mode and the program mode for adaptively adjusting the read voltage and the program voltage, thereby improving the data access time.

Abstract: A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

Abstract: A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer from an interface tool to a Chemical Mechanical Polishing (CMP) tool. The method further includes polishing the semiconductor wafer with the CMP tool. The method also includes transferring the semiconductor wafer back to the interface tool from the CMP tool. In addition, the method includes converting a mixture to a mist spray and discharging the mist spray over the semiconductor wafer in the interface tool after the semiconductor wafer is polished by the CMP tool.

Abstract: A method for processing a semiconductor wafer is provided. The method includes transferring the semiconductor wafer from an interface tool to a Chemical Mechanical Polishing (CMP) tool. The method further includes polishing the semiconductor wafer with the CMP tool. The method also includes transferring the semiconductor wafer back to the interface tool from the CMP tool. In addition, the method includes converting a mixture to a mist spray and discharging the mist spray over the semiconductor wafer in the interface tool after the semiconductor wafer is polished by the CMP tool.

Abstract: A method of using a chemical mechanical polishing (CMP)apparatus that includes a apparatus is provided. The method includes providing a conditioning disc for conditioning the polishing pad, where the conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

Abstract: An electronic apparatus includes a host, a touch control screen, a pivot unit, a retaining unit, and a control unit. The retaining unit includes a driving member electrically operable to drive a retaining member to move between a retaining position and a non-retaining position. The control unit controls, according to an operation signal corresponding to a status of the touch control screen, the driving member to drive the retaining member to either move to the retaining position for resisting rotation of the touch control screen relative to the host, or move to the non-retaining position for not resisting rotation of the touch control screen relative to the host.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided that includes a conditioning disc for conditioning a polishing pad of the CMP apparatus. The conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

Abstract: An electronic apparatus includes a host, a touch control screen, a pivot unit, a retaining unit, and a control unit. The retaining unit includes a driving member electrically operable to drive a retaining member to move between a retaining position and a non-retaining position. The control unit controls, according to an operation signal corresponding to a status of the touch control screen, the driving member to drive the retaining member to either move to the retaining position for resisting rotation of the touch control screen relative to the host, or move to the non-retaining position for not resisting rotation of the touch control screen relative to the host.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided that includes a conditioning disc for conditioning a polishing pad of the CMP apparatus. The conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided that includes a conditioning disc for conditioning a polishing pad of the CMP apparatus. The conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.