Patents by Inventor Hsiu-Mu Tang
Hsiu-Mu Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9324909Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: GrantFiled: June 15, 2015Date of Patent: April 26, 2016Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20150280064Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: ApplicationFiled: June 15, 2015Publication date: October 1, 2015Inventors: Chang-Chin YU, Hsiu-Mu TANG, Mong-Ea LIN
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Patent number: 9087960Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: GrantFiled: June 6, 2013Date of Patent: July 21, 2015Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Patent number: 9064998Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: GrantFiled: November 26, 2014Date of Patent: June 23, 2015Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20150079716Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: ApplicationFiled: November 26, 2014Publication date: March 19, 2015Inventors: Chang-Chin YU, Hsiu-Mu TANG, Mong-Ea LIN
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Patent number: 8946675Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: GrantFiled: March 12, 2013Date of Patent: February 3, 2015Assignee: Lextar Electronics CorporationInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Patent number: 8659029Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.Type: GrantFiled: November 21, 2011Date of Patent: February 25, 2014Assignee: Lextar Electronics CorporationInventors: Te-Chung Wang, Fu-Bang Chen, Hsiu-Mu Tang
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Publication number: 20140027802Abstract: An LED with undercut includes a first semiconductor layer, an illumination layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer includes a first area and a second area. A first acute angle is included between a first slanted wall and a first top surface of the first area. The illuminating layer is formed on the second area. The second semiconductor is formed on the illuminating layer. The first and second electrodes are respectively formed on the first top surface and the second semiconductor layer. The first semiconductor layer on the second area, the illuminating layer and the second semiconductor layer on the first semiconductor layer form a MESA structure. The MESA structure includes a second slanted wall adjacent to the first area. A second acute angle is included between the second slanted wall and the first top surface.Type: ApplicationFiled: May 29, 2013Publication date: January 30, 2014Applicant: LEXTRA ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20130341589Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.Type: ApplicationFiled: March 12, 2013Publication date: December 26, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20130328010Abstract: A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided.Type: ApplicationFiled: March 11, 2013Publication date: December 12, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20130328057Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.Type: ApplicationFiled: June 6, 2013Publication date: December 12, 2013Inventors: Chang-Chin Yu, Hsiu-Mu Tang, Mong-Ea Lin
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Publication number: 20120241752Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.Type: ApplicationFiled: November 21, 2011Publication date: September 27, 2012Inventors: Te-Chung Wang, Fu-Bang Chen, Hsiu-Mu Tang