Patents by Inventor Hsiu-Shan Lin

Hsiu-Shan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a gate dielectric layer
    Patent number: 6555485
    Abstract: This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O2) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.
    Type: Grant
    Filed: January 28, 2002
    Date of Patent: April 29, 2003
    Assignee: United Microelectronics Corp.
    Inventors: Chuan-Hsi Liu, Hsiu-Shan Lin, Yu-Yin Lin, Tung-Ming Pan, Kuo-Tai Huang