Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

Abstract: A method for fabricating an ?-Al2O3 powder with a size distribution substantially ranging from 30 nm to 100 nm, wherein the method comprises the following steps: First, at least one transition phase Al2O3 crystallite is provided, and then a coating process is conducted on the Al2O3 crystallite coating an aluminum compound on the Al2O3 crystallite to form a plurality of agglomerates having a size distribution substantially ranging from 50 nm to 200 nm. Subsequently, the agglomerates are thermally treated to form ?-Al2O3 powder.

Abstract: A cold cathode tube having a fluorescent material coated along the inner wall thereof and the tube being filled with a small amount of gas, characterized in that the inner wall of the tube is coated with a ultra-violet ray reflective film capable of reflecting ultra-violet light, and the light emission surface at the inner side of the ultra-violet light reflective film does not coat with a fluorescent material, and the remaining region of the light emission surface at the outer wall is coated with a visible light-reflective layer. In addition, the length of the parallel section of the tube can be extended to increase lighting area, and thus the efficiency of light energy output is increased.