Abstract: The present invention provides a method of forming a metal capacitor with two metal electrodes. The first step of the present invention is providing a substrate comprising a source/drain area and a capacitor area. Then a first insulating layer is formed. A step of patterning the first insulating layer is performed to form at least one contact hole. A barrier metal layer is conformably formed on the surface of the contact hole and the insulating layer. Then a metal plug is formed in the contact hole. Then a dielectric plate with an area larger than that of the capacitor area is formed on a predetermined surface of the metal plug and the barriermetal layer. Then a metal layer is formed and patterned to define a top electrode plate, a bottom plate and at least a metal line. The top electrode plate is the metal layer on the top center of the dielectric plate, the bottom electrode plate is the barrier metal layer under the dielectric plate.