Patents by Inventor Hsiu-Yun YEH

Hsiu-Yun YEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electron-beam lithography method and system
    Patent number: 10115563
    Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: October 30, 2018
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chieh-Hsiung Kuan, Chun Nien, Wen-Sheng Su, Li-Cheng Chang, Cheng-Huan Chung, Wei-Cheng Rao, Hsiu-Yun Yeh, Shao-Wen Chang, Kuan-Yuan Shen, Susumu Ono
  • Electron-Beam Lithography Method and System
    Publication number: 20180149980
    Abstract: An electron-beam lithography method includes, computing and outputting a development time of a positive-tone electron-sensitive layer and a parameter recipe of an electron-beam device by using a pattern dimension simulation system, performing a low-temperature treatment to chill a developer solution, utilizing an electron-beam to irradiate an exposure region of the positive-tone electron-sensitive layer based on the parameter recipe, and utilizing the chilled developer solution to develop a development region of the positive-tone electron-sensitive layer based on the development time. The development region is present within the exposure region, and an area of the exposure region is smaller than that of the first portion. As a result, the electron-beam lithography method may control a dimension of a development pattern of the positive-tone electron-sensitive layer more accurately, and may also shrink a minimum dimension of the development pattern of the positive-tone electron-sensitive layer.
    Type: Application
    Filed: June 1, 2017
    Publication date: May 31, 2018
    Inventors: Chieh-Hsiung KUAN, Chun NIEN, Wen-Sheng SU, Li-Cheng CHANG, Cheng-Huan CHUNG, Wei-Cheng RAO, Hsiu-Yun YEH, Shao-Wen CHANG, Kuan-Yuan SHEN, Susumu ONO