Abstract: Techniques pertaining to anti-motion and anti-interference frame exchange sequences in wireless communications are described. A station (STA), such as a Wi-Fi equipment, determines to enable a frame exchange sequence (FES). The STA then communicates with one or more other STAs by utilizing the FES in which preamble puncturing sounding and data transmission are performed in a same transmission opportunity (TXOP).

Abstract: A non-volatile memory structure includes a substrate and a gate stack layer over the substrate. The gate stack layer includes an active pattern and a rail block. The active pattern includes several first active stacks and several second active stacks. The first active stacks and the second active stacks are arranged separately in the first direction, and they extend in the second direction. The second direction is different from the first direction. The rail block extends in the first direction. The rail block has a first side and a second side. The second side is opposite the first side. The first active stacks connect the first side of the rail block. The second active stacks connect the second side of the rail block. Also, the first side of the rail block includes several first protruding portions arranged separately in the first direction.

Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.

Abstract: An electronic device and a non-transitory computer-readable storage medium are provided. The electronic device includes a storage module and a processing module. The storage module is configured to store at least one program instruction. The processing module is coupled to the storage module, and is configured to load the at least one program instruction to perform the following steps: parsing a plurality of cells in an analysis area in a data sheet to identify each of the cells as a formula cell or a non-formula cell; classifying the formula cells so that the formula cells having similar formula expressions fall into the same formula group; analyzing a formula structure of the formula expressions of each formula group to output at least one recommended chart option.

Abstract: An angle sensing device includes a base, a rotation shaft, a detected target, and a proximity sensor. The rotation shaft is rotatably arranged on the base, and includes a side surface and a virtual axis. The detected target is arranged on the side surface, and an outer contour of a cross section of the detected target along a radial direction of the rotation shaft includes a first detected position and a second detected position, where a distance of the first detected position with respect to the virtual axis is different from that of the second detected position. The proximity sensor is fixedly arranged on the base and faces the detected target. When the detected target rotates together with the rotation shaft, the proximity sensor emits light toward the detected target and detects reflected light from the outer contour of the detected target to generate measurement data.

Abstract: A method for prelithiating a soft carbon negative electrode includes the steps of: disposing the soft carbon negative electrode and a lithium metal piece spaced apart from each other with a lithium-containing electrolyte present therebetween; prelithiating the soft carbon negative electrode at a first constant C-rate until a voltage thereof is reduced to a first predetermined voltage not greater than 0.3 V vs. Li/Li+, the first constant C-rate being not greater than 5 C; prelithiating the soft carbon negative electrode at a second constant C-rate until the voltage thereof is reduced to a second predetermined voltage lower than the first predetermined voltage, the second constant C-rate being not greater than 0.2 C and being less than the first constant C-rate; and prelithiating the soft carbon negative electrode at a prelithiation constant voltage which is not greater than the second predetermined voltage, thereby completing prelithiation of the soft carbon negative electrode.

Abstract: A method for a clean procedure during manufacturing a semiconductor device, includes: providing a patterned sacrificial gate structure including a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed; performing a first etching process to remove the sacrificial layer; and performing a hydrophilic treatment and a hydrophobic treatment to remove a residue of the sacrificial layer.

Abstract: A method of generating an IC layout diagram includes receiving an IC layout diagram including a gate region and a gate via, the gate via being positioned at a location within an active region and along a width of the gate region extending across the active region, receiving a first gate resistance value of the gate region, retrieving a second gate resistance value from a resistance value reference based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: A method for making a carbon material for an anode of a lithium-ion secondary battery includes a sequence of: a) heating a heavy hydrocarbon oil to obtain a green coke, b) a heating the green coke to form a carbon-containing material, c) grinding the carbon-containing material into a powder, and collecting a portion of the powder, d) heating the portion of the powder to obtain a carbonaceous powder, and e) adding pitch to the carbonaceous powder and heating the pitch-contained carbonaceous powder. A lithium-ion secondary battery, which includes the anode having the carbon material, is also disclosed.

Abstract: A viscosity-sensing apparatus includes a ring and sensors. The ring is connected to a pipe of a tank. The sensors are connected to an internal face of the ring at various heights. Sludge travels into the ring from the tank through the pipe. The sensors sense values of viscosity of the sludge at various depths in the ring.

Abstract: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.

Abstract: In some examples, a device can include a first antenna having a first wireless connection with a first computing device, a second antenna having a second wireless connection with a second computing device, and a controller to determine a signal strength of the first wireless connection and a signal strength of the second wireless connection, designate, in response to the signal strength of the first wireless connection being greater than a threshold signal strength, the first wireless connection as an active connection and the second wireless connection as a standby connection, and cause the peripheral device to communicate with the first computing device via the active connection of the first antenna while maintaining the second wireless connection to the second computing device via the second antenna, where the second wireless connection remains as the standby connection.

Abstract: A computing system including a water-resistant chassis, at least one electronic component with a heat sink, and a gap filler. The heat sink includes an arrangement of fins separated by inter-fin spaces. The gap filler is in contact with both the heat sink and the water-resistant chassis. The gap filler is positioned in the inter-fin spaces to provide a heat conduction path between the heat sink and the chassis.

Abstract: Methods, systems, and devices for providing computer implemented services are disclosed. To provide the computer implemented services, the quantity of hardware resources available for providing the computer implemented services may be modified. The quantity of hardware resources may be modified by adding removable cards to a host system. The host system may, while the added removable cards are cold, selectively warm the removable cards through conduction heating to retain their temperatures within operating temperature ranges.

Abstract: An electro-acoustical transducer device is disclosed, which includes: a hollow disk body that generally defines an axis of propagation, the hollow disk body comprising: a pair of plate members extending substantially perpendicular to the axis of propagation, each provided with a central transmitting port arranged about the axis of propagation, and a peripheral enclosure jointing the pair of plate members at the respective outer edge portions thereof, thereby defining a chamber of resonance between the pair of plate members; wherein a ring-opening about the axis of propagation that enables access to the chamber of resonance is formed between the central transmitting ports of the plate members.

Abstract: Methods and systems for managing the operation of data processing systems are disclosed. A data processing system may include a computing device that may provide computer implemented services. To provide the computer implemented services, hardware components of the data processing system may need to operate in predetermined manners. To manage the operation of the hardware components, the data processing system may cool them when their temperatures fall outside of thermal operating ranges. To facilitate cooling, fans may be densely packed and arranged in a manner the occupies a majority of the space in a stack up. At least one side of the fans may be exposed and may not be covered.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: Methods, systems, and devices for managing the operation of data processing systems are disclosed. A data processing system may include a computing device that may provide computer-implemented services. To provide the computer-implemented services, hardware components of the data processing system may need to operate within certain thermal dissipation requirements. To regulate the temperature of the hardware components, a fan may circulate air through the data processing system when the temperatures fall outside the thermal dissipation requirements. To regulate the temperature of the hardware components more efficiently, higher air flow rates may be desired. To increase air flow rates, a three-dimensional ventilation port may be implemented to de-constrict air flow when air enters or exits the data processing system.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.